Datasheet > MMDF4207

MMDF4207

更新时间： 2024-09-14 19:57:43

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
12页	191K
描述
MMDF4207

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中文翻译

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技术参数
数据手册

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MMDF4207 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.6
Base Number Matches：	1

MMDF4207 数据手册

Preferred Device

Medium Power Surface Mount Products

MiniMOS devices are an advanced series of power MOSFETs

which utilize ON Semiconductor’s latest MOSFET technology

process to achieve the lowest possible on–resistance per silicon area.

They are capable of withstanding high energy in the avalanche and

commutation modes and the drain–to–source diode has a very low

reverse recovery time. MiniMOS devices are designed for use in low

voltage, high speed switching applications where power efficiency is

important. Typical applications are dc–dc converters, and power

management in portable and battery powered products such as

computers, printers, cellular and cordless phones. They can also be

used for low voltage motor controls in mass storage products such as

disk drives and tape drives. The avalanche energy is specified to

eliminate the guesswork in designs where inductive loads are switched

and offer additional safety margin against unexpected voltage

transients.

http://onsemi.com

DUAL TMOS

POWER MOSFET

6.2 AMPERES

20 VOLTS

= 0.033 Ω

DS(on)

• Ultra Low R

Provides Higher Efficiency and

Extends Battery Life in Portable Applications

DS(on)

• Characterized Over a Wide Range of Power Ratings

• Logic Level Gate Drive — Can Be Driven by

Logic ICs

• Diode Is Characterized for Use In Bridge Circuits

• Diode Exhibits High Speed, with Soft Recovery

• I

Specified at Elevated Temperature

DSS

• Miniature SO–8 Surface Mount Package —

SO–8

CASE 751

STYLE 11

Saves Board Space

DRAIN 1

DRAIN 2

SOURCE 1

GATE 1

SOURCE 2

GATE 2

TOP VIEW

ORDERING INFORMATION

Seedetailedorderingandshippinginformationinthepackage

dimensions section on page 10 of this data sheet.

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 1999

Publication Order Number:

November, 1999 – Rev. 1

MMDF4207/D

12 3 4 5 6 7...12

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与MMDF4207相关器件

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MMDF4207R2	MOTOROLA	获取价格	Power Field-Effect Transistor, 4.8A I(D), 20V, 0.033ohm, 1-Element, P-Channel, Silicon, Me
MMDF4207R2	ONSEMI	获取价格	4.8A, 20V, 0.033ohm, P-CHANNEL, Si, POWER, MOSFET, MINIATURE, CASE 751-06, SOP-8
MMDF4C03HD	MOTOROLA	获取价格	COMPLEMENTARY DUAL TMOS POWER FET 30 VOLTS
MMDF4C03HDR2	MOTOROLA	获取价格	5500mA, 30V, 2 CHANNEL,N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MINIATURE, CASE 751-05,
MMDF4N01HD	MOTOROLA	获取价格	DUAL TMOS POWER MOSFET 4.0 AMPERES 20 VOLTS
MMDF4N01HDR2	MOTOROLA	获取价格	4A, 12V, 0.1ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
MMDF4N01ZR1	MOTOROLA	获取价格	Small Signal Field-Effect Transistor, 4.5A I(D), 20V, 2-Element, N-Channel, Silicon, Metal
MMDF4N01ZR2	MOTOROLA	获取价格	4500mA, 20V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
MMDF4N02	MOTOROLA	获取价格	Power Field-Effect Transistor, 2-Element, Metal-oxide Semiconductor FET
MMDF4P03HD	MOTOROLA	获取价格	DUAL TMOS POWER MOSFET 30 VOLTS