MMDF2P02HD

更新时间： 2024-09-09 05:49:23

品牌	Logo	应用领域
安森美 - ONSEMI		晶体小信号场效应晶体管开关光电二极管
页数	文件大小	规格书
8页	96K
描述
Power MOSFET 2 Amps, 20 Volts P−Channel SO−8, Dual

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中文翻译

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技术参数
数据手册
替代型号

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MMDF2P02HD 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	SOT	包装说明：	SMALL OUTLINE, R-PDSO-G8
针数：	8	Reach Compliance Code：	not_compliant
ECCN代码：	EAR99	风险等级：	5.34
其他特性：	LOGIC LEVEL COMPATIBLE	配置：	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压：	20 V	最大漏极电流 (Abs) (ID)：	3.3 A
最大漏极电流 (ID)：	3.3 A	最大漏源导通电阻：	0.16 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	最大反馈电容 (Crss)：	232 pF
JESD-30 代码：	R-PDSO-G8	JESD-609代码：	e0
元件数量：	2	端子数量：	8
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	225
极性/信道类型：	P-CHANNEL	最大功率耗散 (Abs)：	2 W
认证状态：	Not Qualified	子类别：	Other Transistors
表面贴装：	YES	端子面层：	Tin/Lead (Sn/Pb)
端子形式：	GULL WING	端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

MMDF2P02HD 数据手册

MMDF2P02HD

Preferred Device

Power MOSFET

2 Amps, 20 Volts

P−Channel SO−8, Dual

These miniature surface mount MOSFETs feature ultra low R

DS(on)

and true logic level performance. They are capable of withstanding

high energy in the avalanche and commutation modes and the

drain−to−source diode has a very low reverse recovery time.

MiniMOSt devices are designed for use in low voltage, high speed

switching applications where power efficiency is important. Typical

applications are dc−dc converters, and power management in portable

and battery powered products such as computers, printers, cellular and

cordless phones. They can also be used for low voltage motor controls

in mass storage products such as disk drives and tape drives. The

avalanche energy is specified to eliminate the guesswork in designs

where inductive loads are switched and offer additional safety margin

against unexpected voltage transients.

http://onsemi.com

2 AMPERES, 20 VOLTS

R_DS(on)= 160 mW

P−Channel

Features

• Ultra Low R

Provides Higher Efficiency and Extends Battery Life

DS(on)

• Logic Level Gate Drive − Can Be Driven by Logic ICs

• Miniature SO−8 Surface Mount Package − Saves Board Space

• Diode Is Characterized for Use In Bridge Circuits

• Diode Exhibits High Speed, With Soft Recovery

MARKING

DIAGRAM

SO−8, DUAL

CASE 751

STYLE 11

D2P02

AYWWG

• I

Specified at Elevated Temperature

DSS

• Avalanche Energy Specified

• Mounting Information for SO−8 Package Provided

• Pb−Free Package is Available

D2P02 = Device Code

MAXIMUM RATINGS (T = 25°C unless otherwise noted) (Note 1)

= Assembly Location

= Year

= Work Week

Rating

Symbol

Value

Unit

Vdc

Adc

Drain−to−Source Voltage

DSS

= Pb−Free Package

Drain−to−Gate Voltage (R = 1.0 MW)

DGR

(Note: Microdot may be in either location)

Gate−to−Source Voltage − Continuous

PIN ASSIGNMENT

Drain Current − Continuous @ T = 25°C

3.3

2.1

Drain Current − Continuous @ T = 100°C

Drain Current − Single Pulse (t ≤ 10 ms)

Apk

Source−1

Gate−1

Drain−1

Drain−2

Total Power Dissipation, T = 25°C (Note 2)

2.0

− 55 to 150

324

Operating and Storage Temperature Range

T , T

°C

Source−2

stg

Single Pulse Drain−to−Source Avalanche

Gate−2

Drain−2

Energy − Starting T = 25°C (V = 20 Vdc,

= 5.0 Vdc, I = 6.0 Apk,

L = 18 mH, R = 25 W)

ORDERING INFORMATION

Thermal Resistance, Junction−to−Ambient

(Note 2)

62.5

260

°C/W

°C

†

Device

Package

Shipping

MMDF2P02HDR2

MMDF2P02HDR2G

SO−8

2500 Tape & Reel

Maximum Lead Temperature for Soldering

Purposes, 1/8″ from case for 10 seconds

SO−8

(Pb−Free)

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

1. Negative sign for P−Channel device omitted for clarity.

Preferred devices are recommended choices for future use

2. Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided) with

and best overall value.

one die operating, 10 sec. max.

Publication Order Number:

February, 2006 − Rev. 7

MMDF2P02HD/D

12 3 4 5 6 7 8

中文翻译

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MMDF2P02HD 替代型号

型号	品牌	替代类型	描述	数据表
MMDF2P02HDR2G	ONSEMI	功能相似	Power MOSFET 2 Amps, 20 Volts P−Channel SO−8, Dual
MMDF2P02HDR2	ONSEMI	功能相似	Power MOSFET 2 Amps, 20 Volts P−Channel SO−8, Dual

与MMDF2P02HD相关器件

型号	品牌	获取价格	描述	数据表
MMDF2P02HDR2	ONSEMI	获取价格	Power MOSFET 2 Amps, 20 Volts P−Channel SO−8, Dual
MMDF2P02HDR2G	ONSEMI	获取价格	Power MOSFET 2 Amps, 20 Volts P−Channel SO−8, Dual
MMDF2P03HD	ONSEMI	获取价格	Power MOSFET 2 Amps, 30 Volts PâChannel SOâ
MMDF2P03HDR2	ONSEMI	获取价格	Power MOSFET 2 Amps, 30 Volts PâChannel SOâ
MMDF3200Z	MOTOROLA	获取价格	DUAL TMOS POWER MOSFET 11.5 AMPERES 20 VOLTS
MMDF3207	MOTOROLA	获取价格	DUAL TMOS POWER MOSFET 7.8 AMPERES 20 VOLTS
MMDF3207R2	MOTOROLA	获取价格	7800mA, 20V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MINIATURE, CASE 751-06, SO-8
MMDF3304	MOTOROLA	获取价格	7300mA, 30V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MINIATURE, CASE 751-06, SO-8
MMDF3304R2	MOTOROLA	获取价格	Small Signal Field-Effect Transistor, 7.3A I(D), 30V, 2-Element, N-Channel, Silicon, Metal
MMDF3C03HD	MOTOROLA	获取价格	COMPLEMENTARY DUAL TMOS POWER FET 30 VOLTS

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