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MMDF2P02HD

更新时间： 2024-09-08 22:30:03
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管功率场效应晶体管开关光电二极管
页数 文件大小 规格书
10页 259K
描述
DUAL TMOS POWER FET 2.0 AMPERES 20 VOLTS

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MMDF2P02HD 数据手册

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Order this document  
by MMDF2P02HD/D  
SEMICONDUCTOR TECHNICAL DATA  
Medium Power Surface Mount Products  
Motorola Preferred Device  
DUAL TMOS POWER FET  
2.0 AMPERES  
MiniMOS devices are an advanced series of power MOSFETs  
which utilize Motorola’s High Cell Density HDTMOS process.  
20 VOLTS  
TheseminiaturesurfacemountMOSFETsfeatureultralowR  
DS(on)  
R
= 0.160 OHM  
DS(on)  
and true logic level performance. They are capable of withstanding  
high energy in the avalanche and commutation modes and the  
drain–to–source diode has a very low reverse recovery time.  
MiniMOS devices are designed for use in low voltage, high speed  
switching applications where power efficiency is important. Typical  
applications are dc–dc converters, and power management in  
portable and battery powered products such as computers,  
printers, cellular and cordless phones. They can also be used for  
low voltage motor controls in mass storage products such as disk  
drives and tape drives. The avalanche energy is specified to  
eliminate the guesswork in designs where inductive loads are  
switched and offer additional safety margin against unexpected  
voltage transients.  
D
CASE 751–05, Style 11  
SO–8  
G
S
1
2
3
4
8
7
6
5
Drain–1  
Drain–1  
Drain–2  
Drain–2  
Source–1  
Gate–1  
•
•
•
•
•
•
•
•
Ultra Low R Provides Higher Efficiency and Extends Battery Life  
DS(on)  
Logic Level Gate Drive — Can Be Driven by Logic ICs  
Miniature SO–8 Surface Mount Package — Saves Board Space  
Diode Is Characterized for Use In Bridge Circuits  
Diode Exhibits High Speed, With Soft Recovery  
Source–2  
Gate–2  
Top View  
I
Specified at Elevated Temperature  
DSS  
Avalanche Energy Specified  
Mounting Information for SO–8 Package Provided  
(1)  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Symbol  
Value  
20  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Drain–to–Source Voltage  
V
DSS  
Drain–to–Gate Voltage (R  
GS  
= 1.0 MΩ)  
V
DGR  
20  
Gate–to–Source Voltage — Continuous  
V
GS  
± 20  
Drain Current — Continuous @ T = 25°C  
Drain Current — Continuous @ T = 100°C  
Drain Current — Single Pulse (t ≤ 10 µs)  
I
I
3.3  
2.1  
20  
A
A
D
D
I
Apk  
Watts  
°C  
p
DM  
(2)  
Total Power Dissipation @ T = 25°C  
P
D
2.0  
– 55 to 150  
324  
A
Operating and Storage Temperature Range  
T , T  
J stg  
Single Pulse Drain–to–Source Avalanche Energy — Starting T = 25°C  
E
AS  
mJ  
J
(V  
DD  
= 20 Vdc, V = 5.0 Vdc, I = 6.0 Apk, L = 18 mH, R = 25 Ω)  
GS L G  
(2)  
Thermal Resistance — Junction to Ambient  
R
62.5  
260  
°C/W  
°C  
θJA  
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds  
T
L
DEVICE MARKING  
D2P02  
(1) Negative sign for P–Channel device omitted for clarity.  
(2) Mounted on 2” square FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided) with one die operating, 10 sec. max.  
ORDERING INFORMATION  
Device  
Reel Size  
Tape Width  
Quantity  
MMDF2P02HDR2  
13″  
12 mm embossed tape  
2500 units  
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit  
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.  
HDTMOS and MiniMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 5  
Motorola, Inc. 1996  
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