Datasheet > 晶体管 > 功率场效应晶体管> MMDF2N02ER2G

MMDF2N02ER2G

更新时间： 2024-11-18 05:49:23

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数	文件大小	规格书
7页	95K
描述
Power MOSFET 2 Amps, 25 Volts N−Channel SO−8, Dual

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技术参数
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MMDF2N02ER2G 技术参数

是否无铅：	不含铅	生命周期：	Obsolete
零件包装代码：	SOT	包装说明：	SO-8
针数：	8	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.29.00.95
风险等级：	5.42	Is Samacsys：	N
其他特性：	LOGIC LEVEL COMPATIBLE	雪崩能效等级（Eas）：	245 mJ
配置：	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	最小漏源击穿电压：	25 V
最大漏极电流 (Abs) (ID)：	3.6 A	最大漏极电流 (ID)：	3.6 A
最大漏源导通电阻：	0.1 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PDSO-G8	JESD-609代码：	e3
湿度敏感等级：	1	元件数量：	2
端子数量：	8	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	2 W	最大脉冲漏极电流 (IDM)：	18 A
认证状态：	Not Qualified	子类别：	FET General Purpose Power
表面贴装：	YES	端子面层：	Tin (Sn)
端子形式：	GULL WING	端子位置：	DUAL
处于峰值回流温度下的最长时间：	40	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

MMDF2N02ER2G 数据手册

MMDF2N02E

Power MOSFET

2 Amps, 25 Volts

N−Channel SO−8, Dual

These miniature surface mount MOSFETs feature ultra low R

DS(on)

and true logic level performance. They are capable of withstanding

high energy in the avalanche and commutation modes and the

drain−to−source diode has a low reverse recovery time. MiniMOSt

devices are designed for use in low voltage, high speed switching

applications where power efficiency is important. Typical applications

are dc−dc converters, and power management in portable and battery

powered products such as computers, printers, cellular and cordless

phones. They can also be used for low voltage motor controls in mass

storage products such as disk drives and tape drives. The avalanche

energy is specified to eliminate the guesswork in designs where

inductive loads are switched and offer additional safety margin against

unexpected voltage transients.

http://onsemi.com

2 AMPERES, 25 VOLTS

R_DS(on)= 100 mW

N−Channel

Discrete

(Pb−Free)

Features

• Ultra Low R

Provides Higher Efficiency and Extends Battery Life

DS(on)

• Logic Level Gate Drive − Can Be Driven by Logic ICs

• Miniature SO−8 Surface Mount Package − Saves Board Space

• Diode Is Characterized for Use In Bridge Circuits

MARKING

DIAGRAM

• I

Specified at Elevated Temperatures

DSS

SO−8

CASE 751

STYLE 11

F2N02

AYWWG

• Avalanche Energy Specified

• Mounting Information for SO−8 Package Provided

• Pb−Free Package is Available

F2N02 = Device Code

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

= Assembly Location

= Year

Rating

Symbol

Value

Unit

Vdc

Adc

= Work Week

= Pb−Free Package

Drain−to−Source Voltage

DSS

Gate−to−Source Voltage − Continuous

(Note: Microdot may be in either location)

Drain Current − Continuous @ T = 25°C

3.6

2.5

Drain Current − Continuous @ T = 100°C

Drain Current − Single Pulse (t ≤ 10 ms)

PIN ASSIGNMENT

Apk

Total Power Dissipation @ T = 25°C (Note 1)

2.0

−55 to 150

245

Source−1

Gate−1

Drain−1

Drain−2

Operating and Storage Temperature Range

T , T

°C

stg

Single Pulse Drain−to−Source Avalanche

Source−2

Energy − Starting T = 25°C (V = 20 Vdc,

= 10 Vdc, Peak I = 9.0 Apk,

Gate−2

Drain−2

L = 6.0 mH, R = 25 W)

Thermal Resistance, Junction−to−Ambient

(Note 1)

62.5

260

°C/W

°C

ORDERING INFORMATION

†

Device

Package

Shipping

Maximum Lead Temperature for Soldering

Purposes, 0.0625″ from case for 10 seconds

MMDF2N02ER2

SO−8

2500 Tape & Reel

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

MMDF2N02ER2G

SO−8

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

1. Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided) with

one die operating, 10 sec. max.

Publication Order Number:

February, 2006 − Rev. 7

MMDFN02E/D

12 3 4 5 6 7

中文翻译

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MMDF2N02ER2G 替代型号

型号	品牌	替代类型	描述	数据表
FDS4935A	ONSEMI	类似代替	双 P 沟道，PowerTrench® MOSFET，- 30V，-7A，23mΩ
NTMD6N02R2G	ONSEMI	类似代替	Power MOSFET 6.0 Amps, 20 Volts
NTMD4N03R2G	ONSEMI	类似代替	Power MOSFET 4 A, 30 V, NâChannel SOâ8 Du

与MMDF2N02ER2G相关器件

型号	品牌	获取价格	描述	数据表
MMDF2N05ZR2	MOTOROLA	获取价格	DUAL TMOS POWER MOSFET 2.0 AMPERES 50 VOLTS
MMDF2N06V	MOTOROLA	获取价格	DUAL TMOS MOSFET 3.3 AMPERES 60 VOLTS
MMDF2N06V1	MOTOROLA	获取价格	Small Signal Field-Effect Transistor, 3.3A I(D), 60V, 2-Element, N-Channel, Silicon, Metal
MMDF2N06V2	MOTOROLA	获取价格	3300mA, 60V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MINIATURE, CASE 751-05, SO-8
MMDF2N06VL	MOTOROLA	获取价格	DUAL TMOS MOSFET 2.5 AMPERES 60 VOLTS
MMDF2N06VLR1	MOTOROLA	获取价格	Small Signal Field-Effect Transistor, 2.5A I(D), 60V, 2-Element, N-Channel, Silicon, Metal
MMDF2N06VLR2	MOTOROLA	获取价格	2500mA, 60V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MINIATURE, CASE 751-05, SO-8
MMDF2P01HD	MOTOROLA	获取价格	DUAL TMOS POWER FET 2.0 AMPERES 12 VOLTS
MMDF2P01HDR1	MOTOROLA	获取价格	Power Field-Effect Transistor, 2A I(D), 12V, 0.2ohm, 2-Element, P-Channel, Silicon, Metal-
MMDF2P01HDR2	MOTOROLA	获取价格	Power Field-Effect Transistor, 2A I(D), 12V, 0.2ohm, 2-Element, P-Channel, Silicon, Metal-

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