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MMDF2N05ZR2

更新时间： 2024-09-08 22:19:15
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA /
页数 文件大小 规格书
10页 195K
描述
DUAL TMOS POWER MOSFET 2.0 AMPERES 50 VOLTS

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中文翻译

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MMDF2N05ZR2 技术参数

生命周期：Transferred零件包装代码：SOT
包装说明：SMALL OUTLINE, R-PDSO-G8针数：8
Reach Compliance Code：unknown风险等级：5.45
其他特性：LOGIC LEVEL COMPATIBLE配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压：50 V最大漏极电流 (Abs) (ID)：2 A
最大漏极电流 (ID)：2 A最大漏源导通电阻：0.3 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PDSO-G8
JESD-609代码：e0元件数量：1
端子数量：8工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：2 W
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：Tin/Lead (Sn/Pb)
端子形式：GULL WING端子位置：DUAL
晶体管应用：SWITCHING晶体管元件材料：SILICON

MMDF2N05ZR2 数据手册

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Order this document  
by MMDF2N05ZR2/D  
SEMICONDUCTOR TECHNICAL DATA  
Medium Power Surface Mount Products  
Motorola Preferred Device  
DUAL TMOS  
POWER MOSFET  
2.0 AMPERES  
50 VOLTS  
EZFETs are an advanced series of power MOSFETs which  
utilize Motorola’s High Cell Density TMOS process and contain  
monolithic back–to–back zener diodes. These zener diodes  
provide protection against ESD and unexpected transients. These  
R
= 0.300 OHM  
DS(on)  
miniature surface mount MOSFETs feature ultra low R  
and  
DS(on)  
true logic level performance. They are capable of withstanding high  
energy in the avalanche and commutation modes and the  
drain–to–source diode has a very low reverse recovery time.  
EZFET devices are designed for use in low voltage, high speed  
switching applications where power efficiency is important. Typical  
applications are dc–dc converters, and power management in  
portable and battery powered products such as computers,  
printers, cellular and cordless phones. They can also be used for  
low voltage motor controls in mass storage products such as disk  
drives and tape drives.  
D
G
CASE 751–05, Style 11  
SO–8  
S
1
2
3
4
8
7
6
5
Drain–1  
Drain–1  
Drain–2  
Drain–2  
Source–1  
Gate–1  
•
•
•
•
•
•
•
Ultra Low R Provides Higher Efficiency and Extends Battery Life  
DS(on)  
Logic Level Gate Drive — Can Be Driven by Logic ICs  
Miniature SO–8 Surface Mount Package — Saves Board Space  
Diode Is Characterized for Use In Bridge Circuits  
Diode Exhibits High Speed, With Soft Recovery  
Source–2  
Gate–2  
Top View  
I
Specified at Elevated Temperature  
DSS  
Mounting Information for SO–8 Package Provided  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Symbol  
Value  
50  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Drain–to–Source Voltage  
V
DSS  
Drain–to–Gate Voltage (R  
GS  
= 1.0 MΩ)  
V
DGR  
50  
Gate–to–Source Voltage — Continuous  
Drain Current — Continuous @ T = 25°C  
V
GS  
± 15  
I
I
2.0  
1.7  
8.0  
A
D
D
Drain Current — Continuous @ T = 70°C  
A
Drain Current — Single Pulse (t ≤ 10 µs)  
I
Apk  
Watts  
°C  
p
DM  
Total Power Dissipation @ T = 25°C (1)  
P
D
2.0  
– 55 to 150  
62.5  
A
Operating and Storage Temperature Range  
Thermal Resistance — Junction to Ambient  
Maximum Temperature for Soldering Purposes  
T , T  
J
stg  
R
°C/W  
°C  
θJA  
T
L
260  
DEVICE MARKING  
D2N05Z  
ORDERING INFORMATION  
Device  
Reel Size  
Tape Width  
Quantity  
MMDF2N05ZR2  
13″  
12 mm embossed tape  
2500 units  
(1) When mounted on G10/FR–4 glass epoxy board using minimum recommended footprint.  
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit  
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
Designer’s, HDTMOS and EZFET are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a trade-  
mark of the Bergquist Company.  
REV 1  
Motorola, Inc. 1997  
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MMDF2N06V1 MOTOROLA

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 		DUAL TMOS POWER FET 2.0 AMPERES 12 VOLTS
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 		Power Field-Effect Transistor, 2A I(D), 12V, 0.2ohm, 2-Element, P-Channel, Silicon, Metal-
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