MMDF2P02E

更新时间： 2024-11-18 05:49:23

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	94K
描述
Power MOSFET 2 Amps, 25 Volts P−Channel SO−8, Dual

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替代型号

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MMDF2P02E 数据手册

MMDF2P02E

Power MOSFET

2 Amps, 25 Volts

P−Channel SO−8, Dual

These miniature surface mount MOSFETs feature ultra low R

DS(on)

and true logic level performance. They are capable of withstanding

high energy in the avalanche and commutation modes and the

drain−to−source diode has a low reverse recovery time. MiniMOSt

devices are designed for use in low voltage, high speed switching

applications where power efficiency is important. Typical applications

are dc−dc converters, and power management in portable and battery

powered products such as computers, printers, cellular and cordless

phones. They can also be used for low voltage motor controls in mass

storage products such as disk drives and tape drives. The avalanche

energy is specified to eliminate the guesswork in designs where

inductive loads are switched and offer additional safety margin against

unexpected voltage transients.

http://onsemi.com

2 AMPERES, 25 VOLTS

R_DS(on)= 250 mW

P−Channel

Features

• Ultra Low R

Provides Higher Efficiency and Extends Battery Life

DS(on)

• Logic Level Gate Drive − Can Be Driven by Logic ICs

• Miniature SO−8 Surface Mount Package − Saves Board Space

• Diode Is Characterized for Use In Bridge Circuits

• Diode Exhibits High Speed, with Soft Recovery

MARKING

DIAGRAM

F2PO2

AYWW G

• I

Specified at Elevated Temperatures

SO−8, Dual

CASE 751

STYLE 11

DSS

• Avalanche Energy Specified

• Mounting Information for SO−8 Package Provided

• Pb−Free Package is Available

F2P02 = Specific Device Code

MAXIMUM RATINGS (T = 25°C unless otherwise noted) (Note 1)

= Assembly Location

= Year

Rating

Symbol

Value

Unit

Vdc

Adc

= Work Week

Drain−to−Source Voltage

DSS

= Pb−Free Package

(Note: Microdot may be in either location)

Gate−to−Source Voltage − Continuous

Drain Current − Continuous @ T = 25°C

2.5

1.7

Drain Current − Continuous @ T = 100°C

PIN ASSIGNMENT

Drain Current − Single Pulse (t ≤ 10 ms)

Apk

Total Power Dissipation @ T = 25°C (Note

2.0

mW/°C

Source−1

Gate−1

Drain−1

Drain−2

Derate above 25°C

Operating and Storage Temperature Range T , T

−55 to 150

245

°C

stg

Source−2

Single Pulse Drain−to−Source Avalanche

Gate−2

Drain−2

Energy − Starting T = 25°C

Top View

(V = 20 Vdc, V = 10 Vdc, Peak

I = 7.0 Apk, L = 10 mH, R = 25 W)

ORDERING INFORMATION

Thermal Resistance, Junction−to−Ambient

(Note 2)

62.5

260

°C/W

°C

†

Device

Package

Shipping

Maximum Lead Temperature for Soldering

Purposes, 0.0625″ from case for 10 sec.

MMDF2P02ER2

SO−8

2500 Tape & Reel

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Negative sign for P−Channel device omitted for clarity.

2. Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided) with

one die operating, 10 sec. max.

MMDF2P02ER2G

SO−8

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Publication Order Number:

April, 2006 − Rev. 8

MMDF2P02E/D

12 3 4 5 6 7

中文翻译

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MMDF2P02E 替代型号

型号	品牌	替代类型	描述	数据表
MMDF2P02ER2G	ONSEMI	功能相似	Power MOSFET 2 Amps, 25 Volts P−Channel SO−8, Dual
MMDF2P02ER2	ONSEMI	功能相似	Power MOSFET 2 Amps, 25 Volts P−Channel SO−8, Dual

与MMDF2P02E相关器件

型号	品牌	获取价格	描述	数据表
MMDF2P02ER1	MOTOROLA	获取价格	Power Field-Effect Transistor, 2A I(D), 20V, 0.4ohm, 2-Element, P-Channel, Silicon, Metal-
MMDF2P02ER2	ONSEMI	获取价格	Power MOSFET 2 Amps, 25 Volts P−Channel SO−8, Dual
MMDF2P02ER2G	ONSEMI	获取价格	Power MOSFET 2 Amps, 25 Volts P−Channel SO−8, Dual
MMDF2P02HD	ONSEMI	获取价格	Power MOSFET 2 Amps, 20 Volts P−Channel SO−8, Dual
MMDF2P02HD	MOTOROLA	获取价格	DUAL TMOS POWER FET 2.0 AMPERES 20 VOLTS
MMDF2P02HDR2	ONSEMI	获取价格	Power MOSFET 2 Amps, 20 Volts P−Channel SO−8, Dual
MMDF2P02HDR2G	ONSEMI	获取价格	Power MOSFET 2 Amps, 20 Volts P−Channel SO−8, Dual
MMDF2P03HD	ONSEMI	获取价格	Power MOSFET 2 Amps, 30 Volts PâChannel SOâ
MMDF2P03HDR2	ONSEMI	获取价格	Power MOSFET 2 Amps, 30 Volts PâChannel SOâ
MMDF3200Z	MOTOROLA	获取价格	DUAL TMOS POWER MOSFET 11.5 AMPERES 20 VOLTS

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