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MMDF2P01HD PDF预览

MMDF2P01HD

更新时间： 2024-11-20 22:30:03
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数 文件大小 规格书
10页 286K
描述
DUAL TMOS POWER FET 2.0 AMPERES 12 VOLTS

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中文翻译

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MMDF2P01HD 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Obsolete零件包装代码：SOT
包装说明：SMALL OUTLINE, R-PDSO-G8针数：8
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.29.00.95风险等级：5.26
Is Samacsys：N配置：SEPARATE, 2 ELEMENTS
最小漏源击穿电压：12 V最大漏极电流 (Abs) (ID)：2 A
最大漏极电流 (ID)：2 A最大漏源导通电阻：0.2 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PDSO-G8
JESD-609代码：e0元件数量：2
端子数量：8工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：P-CHANNEL
最大功率耗散 (Abs)：1.5 W最大脉冲漏极电流 (IDM)：17 A
认证状态：Not Qualified子类别：Other Transistors
表面贴装：YES端子面层：Tin/Lead (Sn/Pb)
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

MMDF2P01HD 数据手册

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Order this document  
by MMDF2P01HD/D  
SEMICONDUCTOR TECHNICAL DATA  
Medium Power Surface Mount Products  
Motorola Preferred Device  
DUAL TMOS POWER FET  
2.0 AMPERES  
MiniMOS devices are an advanced series of power MOSFETs  
which utilize Motorola’s High Cell Density HDTMOS process.  
12 VOLTS  
TheseminiaturesurfacemountMOSFETsfeatureultralowR  
DS(on)  
R
= 0.18 OHM  
DS(on)  
and true logic level performance. They are capable of withstanding  
high energy in the avalanche and commutation modes and the  
drain–to–source diode has a very low reverse recovery time.  
MiniMOS devices are designed for use in low voltage, high speed  
switching applications where power efficiency is important. Typical  
applications are dc–dc converters, and power management in  
portable and battery powered products such as computers,  
printers, cellular and cordless phones. They can also be used for  
low voltage motor controls in mass storage products such as disk  
drives and tape drives.  
D
CASE 751–05, Style 11  
SO–8  
G
•
•
•
•
•
•
•
Ultra Low R Provides Higher Efficiency and Extends Battery Life  
DS(on)  
S
Logic Level Gate Drive — Can Be Driven by Logic ICs  
Miniature SO–8 Surface Mount Package — Saves Board Space  
Diode Is Characterized for Use In Bridge Circuits  
Diode Exhibits High Speed, With Soft Recovery  
1
2
3
4
8
7
6
5
Drain–1  
Drain–1  
Drain–2  
Drain–2  
Source–1  
Gate–1  
Source–2  
Gate–2  
I
Specified at Elevated Temperature  
DSS  
Mounting Information for SO–8 Package Provided  
Top View  
(1)  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Symbol  
Value  
12  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Drain–to–Source Voltage  
V
DSS  
Drain–to–Gate Voltage (R  
GS  
= 1.0 MΩ)  
V
DGR  
12  
Gate–to–Source Voltage — Continuous  
V
GS  
± 8.0  
Drain Current — Continuous @ T = 25°C  
I
I
3.4  
2.1  
17  
A
D
D
Drain Current — Continuous @ T = 100°C  
A
Drain Current — Single Pulse (t ≤ 10 µs)  
I
Apk  
Watts  
°C  
p
DM  
(2)  
Total Power Dissipation @ T = 25°C  
P
D
2.0  
A
Operating and Storage Temperature Range  
Thermal Resistance — Junction to Ambient  
– 55 to 150  
(2)  
R
62.5  
260  
°C/W  
°C  
θJA  
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds  
T
L
DEVICE MARKING  
D2P01  
(1) Negative sign for P–Channel device omitted for clarity.  
(2) Mounted on 2” square FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided) with one die operating, 10 sec. max.  
ORDERING INFORMATION  
Device  
Reel Size  
Tape Width  
Quantity  
MMDF2P01HDR2  
13″  
12 mm embossed tape  
2500 units  
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit  
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.  
Designer’s, HDTMOS and MiniMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.  
Thermal Clad is a trademark of the Bergquist Company.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 5  
Motorola, Inc. 1996  
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MMDF2P02ER1 MOTOROLA

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MMDF2P02HD ONSEMI

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 		Power MOSFET 2 Amps, 20 Volts P−Channel SO−8, Dual
MMDF2P02HD MOTOROLA

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 		DUAL TMOS POWER FET 2.0 AMPERES 20 VOLTS

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