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MMDF2P01HDR2 PDF预览

MMDF2P01HDR2

更新时间： 2024-11-18 19:59:51
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
12页 118K
描述
3.4A, 12V, 0.18ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, SO-8

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中文翻译

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MMDF2P01HDR2 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Obsolete零件包装代码：SOT
包装说明：SO-8针数：8
Reach Compliance Code：not_compliantECCN代码：EAR99
HTS代码：8541.29.00.95风险等级：5.21
配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压：12 V
最大漏极电流 (Abs) (ID)：3.4 A最大漏极电流 (ID)：3.4 A
最大漏源导通电阻：0.18 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PDSO-G8JESD-609代码：e0
元件数量：2端子数量：8
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：P-CHANNEL最大功率耗散 (Abs)：2 W
最大脉冲漏极电流 (IDM)：17 A认证状态：Not Qualified
子类别：Other Transistors表面贴装：YES
端子面层：Tin/Lead (Sn/Pb)端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

MMDF2P01HDR2 数据手册

 浏览型号MMDF2P01HDR2的Datasheet PDF文件第2页浏览型号MMDF2P01HDR2的Datasheet PDF文件第3页浏览型号MMDF2P01HDR2的Datasheet PDF文件第4页浏览型号MMDF2P01HDR2的Datasheet PDF文件第5页浏览型号MMDF2P01HDR2的Datasheet PDF文件第6页浏览型号MMDF2P01HDR2的Datasheet PDF文件第7页 
MMDF2P01HD  
Preferred Device  
Power MOSFET  
2 Amps, 12 Volts  
P–Channel SO–8, Dual  
These miniature surface mount MOSFETs feature ultra low R  
DS(on)  
and true logic level performance. They are capable of withstanding  
high energy in the avalanche and commutation modes and the  
drain–to–source diode has a very low reverse recovery time.  
MiniMOSt devices are designed for use in low voltage, high speed  
switching applications where power efficiency is important. Typical  
applications are dc–dc converters, and power management in portable  
and battery powered products such as computers, printers, cellular and  
cordless phones. They can also be used for low voltage motor controls  
in mass storage products such as disk drives and tape drives.  
http://onsemi.com  
2 AMPERES  
12 VOLTS  
R
= 180 mW  
DS(on)  
P–Channel  
• Ultra Low R  
Provides Higher Efficiency and Extends Battery  
D
DS(on)  
Life  
• Logic Level Gate Drive – Can Be Driven by Logic ICs  
• Miniature SO–8 Surface Mount Package – Saves Board Space  
• Diode Is Characterized for Use In Bridge Circuits  
• Diode Exhibits High Speed, With Soft Recovery  
G
S
• I  
Specified at Elevated Temperature  
DSS  
• Mounting Information for SO–8 Package Provided  
MARKING  
DIAGRAM  
MAXIMUM RATINGS (T = 25°C unless otherwise noted) (Note 1.)  
J
SO–8, Dual  
CASE 751  
STYLE 11  
D2P01  
LYWW  
Rating  
Drain–to–Source Voltage  
Drain–to–Gate Voltage (R  
Symbol  
Value  
12  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
8
V
DSS  
1
= 1.0 MΩ)  
V
DGR  
12  
GS  
Gate–to–Source Voltage – Continuous  
V
GS  
± 8.0  
L
Y
WW  
= Location Code  
= Year  
= Work Week  
Drain Current – Continuous @ T = 25°C  
I
I
3.4  
2.1  
17  
A
D
D
Drain Current – Continuous @ T = 100°C  
A
Drain Current – Single Pulse (t ≤ 10 µs)  
I
Apk  
p
DM  
Total Power Dissipation @ T = 25°C  
(Note 2.)  
P
D
2.0  
Watts  
A
PIN ASSIGNMENT  
Operating and Storage Temperature Range  
– 55 to 150  
62.5  
°C  
Source–1  
Gate–1  
Drain–1  
Drain–1  
Drain–2  
1
2
3
4
8
7
6
5
Thermal Resistance – Junction to Ambient  
(Note 2.)  
R
°C/W  
θJA  
Source–2  
Maximum Lead Temperature for Soldering  
Purposes, 1/8″ from case for 10 seconds  
T
L
260  
°C  
Gate–2  
Drain–2  
Top View  
1. Negative sign for P–Channel device omitted for clarity.  
2. Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided) with  
one die operating, 10 sec. max.  
ORDERING INFORMATION  
Device  
Package  
Shipping  
2500 Tape & Reel  
MMDF2P01HDR2  
SO–8  
Preferred devices are recommended choices for future use  
and best overall value.  
Semiconductor Components Industries, LLC, 2000  
1
Publication Order Number:  
November, 2000 – Rev. 6  
MMDF2P01HD/D  
1234567...12

中文翻译

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MMDF2P01HDR2 替代型号

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