生命周期: | Obsolete | 包装说明: | , |
Reach Compliance Code: | unknown | 风险等级: | 5.82 |
最大漏极电流 (Abs) (ID): | 3.6 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 2 W |
子类别: | FET General Purpose Power | 表面贴装: | YES |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MMDF2N02ER1 | MOTOROLA |
获取价格 |
Power Field-Effect Transistor, 2.2A I(D), 20V, 0.1ohm, 2-Element, N-Channel, Silicon, Meta |
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MMDF2N02ER2 | ONSEMI |
获取价格 |
Power MOSFET 2 Amps, 25 Volts N−Channel SO−8, Dual |
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MMDF2N02ER2 | MOTOROLA |
获取价格 |
Power Field-Effect Transistor, 3.6A I(D), 25V, 0.1ohm, 2-Element, N-Channel, Silicon, Meta |
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MMDF2N02ER2G | ONSEMI |
获取价格 |
Power MOSFET 2 Amps, 25 Volts N−Channel SO−8, Dual |
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MMDF2N05ZR2 | MOTOROLA |
获取价格 |
DUAL TMOS POWER MOSFET 2.0 AMPERES 50 VOLTS |
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MMDF2N06V | MOTOROLA |
获取价格 |
DUAL TMOS MOSFET 3.3 AMPERES 60 VOLTS |
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MMDF2N06V1 | MOTOROLA |
获取价格 |
Small Signal Field-Effect Transistor, 3.3A I(D), 60V, 2-Element, N-Channel, Silicon, Metal |
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MMDF2N06V2 | MOTOROLA |
获取价格 |
3300mA, 60V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MINIATURE, CASE 751-05, SO-8 |
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MMDF2N06VL | MOTOROLA |
获取价格 |
DUAL TMOS MOSFET 2.5 AMPERES 60 VOLTS |
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MMDF2N06VLR1 | MOTOROLA |
获取价格 |
Small Signal Field-Effect Transistor, 2.5A I(D), 60V, 2-Element, N-Channel, Silicon, Metal |
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