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MMDF2N02E PDF预览

MMDF2N02E

更新时间： 2024-02-20 15:06:16
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 95K
描述
Power MOSFET 2 Amps, 25 Volts N−Channel SO−8, Dual

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MMDF2N02E 技术参数

生命周期：Obsolete包装说明：,
Reach Compliance Code：unknown风险等级：5.82
最大漏极电流 (Abs) (ID)：3.6 AFET 技术：METAL-OXIDE SEMICONDUCTOR
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：2 W
子类别：FET General Purpose Power表面贴装：YES
Base Number Matches：1

MMDF2N02E 数据手册

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MMDF2N02E  
Power MOSFET  
2 Amps, 25 Volts  
N−Channel SO−8, Dual  
These miniature surface mount MOSFETs feature ultra low R  
DS(on)  
and true logic level performance. They are capable of withstanding  
high energy in the avalanche and commutation modes and the  
drain−to−source diode has a low reverse recovery time. MiniMOSt  
devices are designed for use in low voltage, high speed switching  
applications where power efficiency is important. Typical applications  
are dc−dc converters, and power management in portable and battery  
powered products such as computers, printers, cellular and cordless  
phones. They can also be used for low voltage motor controls in mass  
storage products such as disk drives and tape drives. The avalanche  
energy is specified to eliminate the guesswork in designs where  
inductive loads are switched and offer additional safety margin against  
unexpected voltage transients.  
http://onsemi.com  
2 AMPERES, 25 VOLTS  
RDS(on) = 100 mW  
N−Channel  
D
Discrete  
(Pb−Free)  
G
Features  
S
• Ultra Low R  
Provides Higher Efficiency and Extends Battery Life  
DS(on)  
• Logic Level Gate Drive − Can Be Driven by Logic ICs  
• Miniature SO−8 Surface Mount Package − Saves Board Space  
• Diode Is Characterized for Use In Bridge Circuits  
MARKING  
DIAGRAM  
8
1
• I  
Specified at Elevated Temperatures  
DSS  
SO−8  
CASE 751  
STYLE 11  
F2N02  
AYWWG  
G
• Avalanche Energy Specified  
8
• Mounting Information for SO−8 Package Provided  
• Pb−Free Package is Available  
1
F2N02 = Device Code  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
A
Y
= Assembly Location  
= Year  
Rating  
Symbol  
Value  
25  
Unit  
Vdc  
Vdc  
Adc  
WW  
G
= Work Week  
= Pb−Free Package  
Drain−to−Source Voltage  
V
DSS  
Gate−to−Source Voltage − Continuous  
V
GS  
20  
(Note: Microdot may be in either location)  
Drain Current − Continuous @ T = 25°C  
I
I
3.6  
2.5  
18  
A
D
D
Drain Current − Continuous @ T = 100°C  
A
Drain Current − Single Pulse (t ≤ 10 ms)  
PIN ASSIGNMENT  
p
I
Apk  
W
DM  
Total Power Dissipation @ T = 25°C (Note 1)  
P
2.0  
−55 to 150  
245  
A
D
Source−1  
Gate−1  
Drain−1  
Drain−1  
Drain−2  
1
2
3
4
8
7
6
5
Operating and Storage Temperature Range  
T , T  
J
°C  
stg  
Single Pulse Drain−to−Source Avalanche  
E
AS  
mJ  
Source−2  
Energy − Starting T = 25°C (V = 20 Vdc,  
J
DD  
V
GS  
= 10 Vdc, Peak I = 9.0 Apk,  
Gate−2  
Drain−2  
L
L = 6.0 mH, R = 25 W)  
G
Thermal Resistance, Junction−to−Ambient  
(Note 1)  
R
62.5  
260  
°C/W  
°C  
q
JA  
ORDERING INFORMATION  
†
Device  
Package  
Shipping  
Maximum Lead Temperature for Soldering  
Purposes, 0.0625″ from case for 10 seconds  
T
L
MMDF2N02ER2  
SO−8  
2500 Tape & Reel  
2500 Tape & Reel  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
MMDF2N02ER2G  
SO−8  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
1. Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided) with  
one die operating, 10 sec. max.  
© Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
February, 2006 − Rev. 7  
MMDFN02E/D  
 
1234567

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