Datasheet > MMDF2C03HDR2

MMDF2C03HDR2

更新时间： 2024-02-10 00:16:54

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
10页	117K
描述
Power MOSFET 2 Amps, 30 Volts Complementary SO-8, Dual

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MMDF2C03HDR2 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	SOT	包装说明：	MINIATURE, CASE 751-07, SO-8
针数：	8	Reach Compliance Code：	not_compliant
HTS代码：	8541.29.00.95	风险等级：	5.42
雪崩能效等级（Eas）：	324 mJ	配置：	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压：	30 V	最大漏极电流 (Abs) (ID)：	4.1 A
最大漏极电流 (ID)：	4.1 A	最大漏源导通电阻：	0.07 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-30 代码：	R-PDSO-G8
JESD-609代码：	e0	湿度敏感等级：	1
元件数量：	2	端子数量：	8
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	240
极性/信道类型：	N-CHANNEL AND P-CHANNEL	最大功率耗散 (Abs)：	2 W
最大脉冲漏极电流 (IDM)：	21 A	认证状态：	Not Qualified
子类别：	Other Transistors	表面贴装：	YES
端子面层：	Tin/Lead (Sn/Pb)	端子形式：	GULL WING
端子位置：	DUAL	处于峰值回流温度下的最长时间：	30
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

MMDF2C03HDR2 数据手册

MMDF2C03HD

Preferred Device

Power MOSFET

2 Amps, 30 Volts

Complementary SO−8, Dual

These miniature surface mount MOSFETs feature ultra low R

DS(on)

and true logic level performance. They are capable of withstanding

high energy in the avalanche and commutation modes and the

drain-to-source diode has a very low reverse recovery time.

MiniMOSt devices are designed for use in low voltage, high speed

switching applications where power efficiency is important. Typical

applications are dc-dc converters, and power management in portable

and battery powered products such as computers, printers, cellular and

cordless phones. They can also be used for low voltage motor controls

in mass storage products such as disk drives and tape drives. The

avalanche energy is specified to eliminate the guesswork in designs

where inductive loads are switched and offer additional safety margin

against unexpected voltage transients.

http://onsemi.com

2 AMPERES, 30 VOLTS

R_DS(on)= 70 mW (N-Channel)

R_DS(on)= 200 mW (P-Channel)

N−Channel

P−Channel

Features

• Ultra Low R

Provides Higher Efficiency and Extends Battery Life

DS(on)

• Logic Level Gate Drive − Can Be Driven by Logic ICs

• Miniature SO-8 Surface Mount Package − Saves Board Space

• Diode Is Characterized for Use In Bridge Circuits

• Diode Exhibits High Speed, With Soft Recovery

MARKING

DIAGRAM

• I

Specified at Elevated Temperature

DSS

• Avalanche Energy Specified

SO−8

D2C03

AYWWG

• Mounting Information for SO-8 Package Provided

• Pb−Free Package is Available

CASE 751

STYLE 14

MAXIMUM RATINGS (T = 25°C unless otherwise noted) (Note 1)

Rating

Drain−to−Source Voltage

Gate−to−Source Voltage

Drain Current − Continuous

Symbol

Value

Unit

Vdc

D2C03 = Device Code

= Assembly Location

DSS

= Year

= Work Week

= Pb−Free Package

N−Channel

P−Channel

N−Channel

P−Channel

4.1

3.0

(Note: Microdot may be in either location)

Drain Current − Pulsed

PIN ASSIGNMENT

Operating and Storage Temperature Range

T , T

− 55 to 150

2.0

°C

stg

N−Source

N−Gate

N−Drain

P−Drain

Total Power Dissipation @ T = 25°C (Note 2)

Thermal Resistance, Junction−to−Ambient

(Note 2)

62.5

°C/W

P−Source

P−Gate

P−Drain

Single Pulse Drain−to−Source Avalanche

Energy − Starting T = 25°C

(V = 30 V, V = 5.0 V, Peak I = 9.0 Apk,

ORDERING INFORMATION

L = 8.0 mH, R = 25 W)

N−Channel

324

†

Device

Package

Shipping

(V = 30 V, V = 5.0 V, Peak I = 6.0 Apk,

324

260

L = 18 mH, R = 25 W)

P−Channel

MMDF2C03HDR2

MMDF2C03HDR2G

SO−8

2500 Tape & Reel

Max Lead Temperature for Soldering, 0.0625″

from case. Time in Solder Bath is 10 seconds

°C

SO−8

(Pb−Free)

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

1. Negative signs for P−Channel device omitted for clarity.

2. Mounted on 2” square FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided) with

one die operating, 10 sec. max.

Preferred devices are recommended choices for future use

and best overall value.

Publication Order Number:

February, 2006 − Rev. 7

MMDF2C03HD/D

12 3 4 5 6 7...10

中文翻译

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与MMDF2C03HDR2相关器件

型号	品牌	获取价格	描述	数据表
MMDF2C03HDR2G	ONSEMI	获取价格	Power MOSFET 2 Amps, 30 Volts Complementary SO-8, Dual
MMDF2C05E	MOTOROLA	获取价格	Transistor
MMDF2C05ER1	MOTOROLA	获取价格	2A, 50V, 0.3ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, CASE 751B-05, SO-16
MMDF2C05ER2	MOTOROLA	获取价格	2A, 50V, 0.3ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, CASE 751B-05, SO-16
MMDF2N02E	MOTOROLA	获取价格	DUAL TMOS MOSFET 3.6 AMPERES 25 VOLTS
MMDF2N02E	ONSEMI	获取价格	Power MOSFET 2 Amps, 25 Volts N−Channel SO−8, Dual
MMDF2N02ER1	MOTOROLA	获取价格	Power Field-Effect Transistor, 2.2A I(D), 20V, 0.1ohm, 2-Element, N-Channel, Silicon, Meta
MMDF2N02ER2	ONSEMI	获取价格	Power MOSFET 2 Amps, 25 Volts N−Channel SO−8, Dual
MMDF2N02ER2	MOTOROLA	获取价格	Power Field-Effect Transistor, 3.6A I(D), 25V, 0.1ohm, 2-Element, N-Channel, Silicon, Meta
MMDF2N02ER2G	ONSEMI	获取价格	Power MOSFET 2 Amps, 25 Volts N−Channel SO−8, Dual

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