MMDF2C03HD
Preferred Device
Power MOSFET
2 Amps, 30 Volts
Complementary SO−8, Dual
These miniature surface mount MOSFETs feature ultra low R
DS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain-to-source diode has a very low reverse recovery time.
MiniMOSt devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dc-dc converters, and power management in portable
and battery powered products such as computers, printers, cellular and
cordless phones. They can also be used for low voltage motor controls
in mass storage products such as disk drives and tape drives. The
avalanche energy is specified to eliminate the guesswork in designs
where inductive loads are switched and offer additional safety margin
against unexpected voltage transients.
http://onsemi.com
2 AMPERES, 30 VOLTS
RDS(on) = 70 mW (N-Channel)
RDS(on) = 200 mW (P-Channel)
N−Channel
P−Channel
D
D
Features
G
G
• Ultra Low R
Provides Higher Efficiency and Extends Battery Life
DS(on)
• Logic Level Gate Drive − Can Be Driven by Logic ICs
• Miniature SO-8 Surface Mount Package − Saves Board Space
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
S
S
MARKING
DIAGRAM
• I
Specified at Elevated Temperature
DSS
8
• Avalanche Energy Specified
SO−8
D2C03
AYWWG
G
• Mounting Information for SO-8 Package Provided
• Pb−Free Package is Available
CASE 751
STYLE 14
8
1
1
MAXIMUM RATINGS (T = 25°C unless otherwise noted) (Note 1)
J
Rating
Drain−to−Source Voltage
Gate−to−Source Voltage
Drain Current − Continuous
Symbol
Value
30
Unit
Vdc
Vdc
A
D2C03 = Device Code
A
= Assembly Location
V
DSS
Y
= Year
V
GS
20
WW
G
= Work Week
= Pb−Free Package
N−Channel
P−Channel
N−Channel
P−Channel
I
D
4.1
3.0
21
(Note: Microdot may be in either location)
Drain Current − Pulsed
I
DM
15
PIN ASSIGNMENT
Operating and Storage Temperature Range
T , T
− 55 to 150
2.0
°C
W
J
stg
N−Source
N−Gate
N−Drain
N−Drain
P−Drain
1
2
3
4
8
7
6
5
Total Power Dissipation @ T = 25°C (Note 2)
P
D
A
Thermal Resistance, Junction−to−Ambient
(Note 2)
R
62.5
°C/W
q
JA
P−Source
P−Gate
P−Drain
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
Energy − Starting T = 25°C
J
(V = 30 V, V = 5.0 V, Peak I = 9.0 Apk,
ORDERING INFORMATION
DD
GS
L
L = 8.0 mH, R = 25 W)
N−Channel
324
G
†
Device
Package
Shipping
(V = 30 V, V = 5.0 V, Peak I = 6.0 Apk,
DD
GS
L
324
260
L = 18 mH, R = 25 W)
P−Channel
G
MMDF2C03HDR2
MMDF2C03HDR2G
SO−8
2500 Tape & Reel
2500 Tape & Reel
Max Lead Temperature for Soldering, 0.0625″
from case. Time in Solder Bath is 10 seconds
T
L
°C
SO−8
(Pb−Free)
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1. Negative signs for P−Channel device omitted for clarity.
2. Mounted on 2” square FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided) with
one die operating, 10 sec. max.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
February, 2006 − Rev. 7
MMDF2C03HD/D