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MMDF2C01HDR2 PDF预览

MMDF2C01HDR2

更新时间： 2024-11-18 21:18:03
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
16页 162K
描述
5.2A, 20V, 0.045ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, SO-8

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中文翻译

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MMDF2C01HDR2 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：SOT包装说明：SO-8
针数：8Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
风险等级：5.25配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压：20 V最大漏极电流 (Abs) (ID)：5.2 A
最大漏极电流 (ID)：5.2 A最大漏源导通电阻：0.045 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PDSO-G8
JESD-609代码：e0元件数量：2
端子数量：8工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL AND P-CHANNEL
最大功率耗散 (Abs)：2 W最大脉冲漏极电流 (IDM)：48 A
认证状态：Not Qualified子类别：Other Transistors
表面贴装：YES端子面层：Tin/Lead (Sn/Pb)
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

MMDF2C01HDR2 数据手册

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MMDF2C01HD  
Preferred Device  
Power MOSFET  
2 Amps, 12 Volts  
Complementary SO–8, Dual  
These miniature surface mount MOSFETs feature ultra low R  
DS(on)  
http://onsemi.com  
and true logic level performance. They are capable of withstanding  
high energy in the avalanche and commutation modes and the drain–  
to–source diode has a very low reverse recovery time. MiniMOSt de-  
vices are designed for use in low voltage, high speed switching  
applications where power efficiency is important. Typical applications  
are dc–dc converters, and power management in portable and battery  
powered products such as computers, printers, cellular and cordless  
phones. They can also be used for low voltage motor controls in mass  
storage products such as disk drives and tape drives.  
2 AMPERES  
12 VOLTS  
= 45 mW (N–Channel)  
= 180 mW (P–Channel)  
R
R
DS(on)  
DS(on)  
N–Channel  
D
P–Channel  
• Ultra Low R  
Provides Higher Efficiency and Extends  
DS(on)  
D
Battery Life  
• Logic Level Gate Drive – Can Be Driven by Logic ICs  
• Miniature SO–8 Surface Mount Package – Saves Board Space  
• Diode Is Characterized for Use In Bridge Circuits  
• Diode Exhibits High Speed, With Soft Recovery  
G
G
• I  
Specified at Elevated Temperature  
DSS  
• Mounting Information for SO–8 Package Provided  
S
S
MARKING  
DIAGRAM  
MAXIMUM RATINGS (T = 25°C unless otherwise noted) (Note 1.)  
J
Rating  
Symbol  
V
Value  
Unit  
Drain–to–Source Voltage  
N–Channel  
Vdc  
DSS  
20  
12  
SO–8, Dual  
CASE 751  
STYLE 14  
D2C01  
LYWW  
P–Channel  
8
Gate–to–Source Voltage  
V
GS  
± 8.0  
Vdc  
A
1
Drain Current – Continuous  
N–Channel  
P–Channel  
N–Channel  
P–Channel  
I
5.2  
3.4  
48  
D
– Pulsed  
I
DM  
L
Y
= Location Code  
= Year  
17  
WW  
= Work Week  
Operating and Storage Temperature Range  
T and  
T
stg  
–55 to  
150  
°C  
Watts  
°C/W  
°C  
J
PIN ASSIGNMENT  
Total Power Dissipation @ T = 25°C  
P
D
2.0  
62.5  
260  
A
(Note 2.)  
N–Source  
N–Gate  
N–Drain  
N–Drain  
P–Drain  
1
2
3
4
8
7
6
5
Thermal Resistance – Junction to Ambient  
(Note 2.)  
R
θJA  
P–Source  
Maximum Lead Temperature for Soldering  
Purposes, 1/8″ from case for 10 seconds.  
T
L
P–Gate  
P–Drain  
1. Negative signs for P–Channel device omitted for clarity.  
2. Mounted on 2” square FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided) with  
one die operating, 10 sec. max.  
Top View  
ORDERING INFORMATION  
Device  
MMDF2C01HDR2  
Package  
Shipping  
2500 Tape & Reel  
SO–8  
Preferred devices are recommended choices for future use  
and best overall value.  
Semiconductor Components Industries, LLC, 2000  
1
Publication Order Number:  
November, 2000 – Rev. 6  
MMDF2C01HD/D  
1234567...16

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