Datasheet > MMDF2C02HDR2

MMDF2C02HDR2

更新时间： 2024-01-09 01:50:57

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		开关脉冲光电二极管晶体管
页数	文件大小	规格书
12页	354K
描述
Power Field-Effect Transistor, 3.8A I(D), 20V, 0.09ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8

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MMDF2C02HDR2 技术参数

是否Rohs认证：	不符合	生命周期：	Transferred
包装说明：	SMALL OUTLINE, R-PDSO-G8	Reach Compliance Code：	unknown
风险等级：	5.63	其他特性：	LOGIC LEVEL COMPATIBLE
雪崩能效等级（Eas）：	405 mJ	配置：	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压：	20 V	最大漏极电流 (Abs) (ID)：	3.8 A
最大漏极电流 (ID)：	3.8 A	最大漏源导通电阻：	0.09 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-30 代码：	R-PDSO-G8
JESD-609代码：	e0	元件数量：	2
端子数量：	8	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	N-CHANNEL AND P-CHANNEL	最大功率耗散 (Abs)：	2 W
最大脉冲漏极电流 (IDM)：	19 A	认证状态：	Not Qualified
子类别：	Other Transistors	表面贴装：	YES
端子面层：	Tin/Lead (Sn/Pb)	端子形式：	GULL WING
端子位置：	DUAL	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

MMDF2C02HDR2 数据手册

Order this document

by MMDF2C02HD/D

SEMICONDUCTOR TECHNICAL DATA

Medium Power Surface Mount Products

Motorola Preferred Device

COMPLEMENTARY

DUAL TMOS POWER FET

2.0 AMPERES

MiniMOS devices are an advanced series of power MOSFETs

which utilize Motorola’s High Cell Density HDTMOS process.

TheseminiaturesurfacemountMOSFETsfeatureultralowR

20 VOLTS

DS(on)

and true logic level performance. They are capable of withstanding

high energy in the avalanche and commutation modes and the

drain–to–source diode has a very low reverse recovery time.

MiniMOS devices are designed for use in low voltage, high speed

switching applications where power efficiency is important. Typical

applications are dc–dc converters, and power management in

portable and battery powered products such as computers,

printers, cellular and cordless phones. They can also be used for

low voltage motor controls in mass storage products such as disk

drives and tape drives. The avalanche energy is specified to

eliminate the guesswork in designs where inductive loads are

switched and offer additional safety margin against unexpected

voltage transients.

= 0.090 OHM

DS(on)

(N–CHANNEL)

= 0.160 OHM

DS(on)

(P–CHANNEL)

N–Channel

CASE 751–05, Style 14

SO–8

•

Ultra Low R

Battery Life

Provides Higher Efficiency and Extends

DS(on)

P–Channel

N–Drain

P–Drain

•

Logic Level Gate Drive — Can Be Driven by Logic ICs

Miniature SO–8 Surface Mount Package — Saves Board Space

Diode Is Characterized for Use In Bridge Circuits

Diode Exhibits High Speed, With Soft Recovery

Avalanche Energy Specified

N–Source

N–Gate

P–Source

P–Gate

Mounting Information for SO–8 Package Provided

Top View

(1)

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Drain–to–Source Voltage

Symbol

Value

Unit

Vdc

DSS

Gate–to–Source Voltage

± 20

Drain–to–Gate Voltage (R

= 1.0 mΩ)

N–Channel

DGR

Drain Current — Continuous

3.8

3.3

P–Channel

N–Channel

P–Channel

— Pulsed

Operating and Storage Temperature Range

(2)

T , T

stg

– 55 to 150

2.0

°C

Watts

Total Power Dissipation @ T = 25°C

Single Pulse Drain–to–Source Avalanche Energy — Starting T = 25°C

= 20 V, V

= 5.0 V, Peak I = 9.0 A, L = 10 mH, R = 25 Ω)

N–Channel

P–Channel

405

324

= 5.0 V, Peak I = 6.0 A, L = 18 mH, R = 25 Ω)

(2)

Thermal Resistance — Junction to Ambient

62.5

260

°C/W

°C

θJA

Maximum Lead Temperature for Soldering, 0.0625″ from case. Time in Solder Bath is 10 seconds.

DEVICE MARKING

D2C02

(1) Negative signs for P–Channel device omitted for clarity.

(2) Mounted on 2” square FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided) with one die operating, 10 sec. max.

ORDERING INFORMATION

Device

Reel Size

Tape Width

Quantity

MMDF2C02HDR2

13″

12 mm embossed tape

2500 units

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

HDTMOS and MiniMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

Thermal Clad is a trademark of the Bergquist Company.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 5

Motorola TMOS Power MOSFET Transistor Device Data

Motorola, Inc. 1996

12 3 4 5 6 7...12

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与MMDF2C02HDR2相关器件

型号	品牌	获取价格	描述	数据表
MMDF2C03HD	MOTOROLA	获取价格	COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 30 VOLTS
MMDF2C03HD	ONSEMI	获取价格	Power MOSFET 2 Amps, 30 Volts Complementary SO-8, Dual
MMDF2C03HDR1	MOTOROLA	获取价格	Power Field-Effect Transistor, 2A I(D), 30V, 0.09ohm, 2-Element, N-Channel and P-Channel,
MMDF2C03HDR2	ONSEMI	获取价格	Power MOSFET 2 Amps, 30 Volts Complementary SO-8, Dual
MMDF2C03HDR2	MOTOROLA	获取价格	Power Field-Effect Transistor, 2A I(D), 30V, 0.09ohm, 2-Element, N-Channel and P-Channel,
MMDF2C03HDR2G	ONSEMI	获取价格	Power MOSFET 2 Amps, 30 Volts Complementary SO-8, Dual
MMDF2C05E	MOTOROLA	获取价格	Transistor
MMDF2C05ER1	MOTOROLA	获取价格	2A, 50V, 0.3ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, CASE 751B-05, SO-16
MMDF2C05ER2	MOTOROLA	获取价格	2A, 50V, 0.3ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, CASE 751B-05, SO-16
MMDF2N02E	MOTOROLA	获取价格	DUAL TMOS MOSFET 3.6 AMPERES 25 VOLTS

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