是否Rohs认证: | 不符合 | 生命周期: | Transferred |
包装说明: | SMALL OUTLINE, R-PDSO-G8 | Reach Compliance Code: | unknown |
风险等级: | 5.63 | 其他特性: | LOGIC LEVEL COMPATIBLE |
雪崩能效等级(Eas): | 405 mJ | 配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
最小漏源击穿电压: | 20 V | 最大漏极电流 (Abs) (ID): | 3.8 A |
最大漏极电流 (ID): | 3.8 A | 最大漏源导通电阻: | 0.09 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G8 |
JESD-609代码: | e0 | 元件数量: | 2 |
端子数量: | 8 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL AND P-CHANNEL | 最大功率耗散 (Abs): | 2 W |
最大脉冲漏极电流 (IDM): | 19 A | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MMDF2C03HD | MOTOROLA |
获取价格 |
COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 30 VOLTS |
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MMDF2C03HD | ONSEMI |
获取价格 |
Power MOSFET 2 Amps, 30 Volts Complementary SO-8, Dual |
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MMDF2C03HDR1 | MOTOROLA |
获取价格 |
Power Field-Effect Transistor, 2A I(D), 30V, 0.09ohm, 2-Element, N-Channel and P-Channel, |
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MMDF2C03HDR2 | ONSEMI |
获取价格 |
Power MOSFET 2 Amps, 30 Volts Complementary SO-8, Dual |
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MMDF2C03HDR2 | MOTOROLA |
获取价格 |
Power Field-Effect Transistor, 2A I(D), 30V, 0.09ohm, 2-Element, N-Channel and P-Channel, |
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MMDF2C03HDR2G | ONSEMI |
获取价格 |
Power MOSFET 2 Amps, 30 Volts Complementary SO-8, Dual |
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MMDF2C05E | MOTOROLA |
获取价格 |
Transistor |
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MMDF2C05ER1 | MOTOROLA |
获取价格 |
2A, 50V, 0.3ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, CASE 751B-05, SO-16 |
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MMDF2C05ER2 | MOTOROLA |
获取价格 |
2A, 50V, 0.3ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, CASE 751B-05, SO-16 |
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MMDF2N02E | MOTOROLA |
获取价格 |
DUAL TMOS MOSFET 3.6 AMPERES 25 VOLTS |
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