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FDS8928A PDF预览

FDS8928A

更新时间： 2024-11-07 11:15:23
品牌 Logo 应用领域
安森美 - ONSEMI 开关脉冲光电二极管晶体管场效应晶体管
页数 文件大小 规格书
11页 267K
描述
双 N 和 P 沟道增强型场效应晶体管

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中文翻译

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FDS8928A 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：SMALL OUTLINE, R-PDSO-G8Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：1 week风险等级：0.96
配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压：30 V
最大漏极电流 (Abs) (ID)：5.5 A最大漏极电流 (ID)：5.5 A
最大漏源导通电阻：0.03 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PDSO-G8JESD-609代码：e3
湿度敏感等级：1元件数量：2
端子数量：8工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL AND P-CHANNEL
最大功率耗散 (Abs)：2 W最大脉冲漏极电流 (IDM)：20 A
认证状态：Not Qualified子类别：Other Transistors
表面贴装：YES端子面层：Tin (Sn)
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

FDS8928A 数据手册

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FDS8928A 替代型号

型号 品牌 替代类型 描述 数据表
MMDF2C01HD MOTOROLA

功能相似

 COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 12 VOLTS
RF1K49092 INTERSIL

功能相似

 3.5A/2.5A, 12V, 0.050/0.130 Ohm, Logic Level,

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FDS8934A FAIRCHILD

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FDS8935 FAIRCHILD

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 		Dual P-Channel PowerTrench® MOSFET -80 V, -2
FDS8935 ONSEMI

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