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MJF18008 PDF预览

MJF18008

更新时间： 2024-11-02 22:30:07
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
10页 424K
描述
POWER TRANSISTOR

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中文翻译

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MJF18008 技术参数

是否无铅： 含铅生命周期：End Of Life
零件包装代码：TO-220AB包装说明：CASE 221D-03, ISOLATED TO-220, FULL PACK-3
针数：3Reach Compliance Code：not_compliant
ECCN代码：EAR99风险等级：5.27
其他特性：UL RECOGNIZED外壳连接：ISOLATED
最大集电极电流 (IC)：8 A集电极-发射极最大电压：450 V
配置：SINGLE最小直流电流增益 (hFE)：6
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
JESD-609代码：e0元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：240
极性/信道类型：NPN最大功率耗散 (Abs)：45 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：NO端子面层：Tin/Lead (Sn/Pb)
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：30晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：13 MHz
Base Number Matches：1

MJF18008 数据手册

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Order this document  
by MJE18008/D  
SEMICONDUCTOR TECHNICAL DATA  
*Motorola Preferred Device  
NPN Bipolar Power Transistor  
For Switching Power Supply Applications  
The MJE/MJF18008 have an applications specific state–of–the–art die designed  
for use in 220 V line–operated Switchmode Power supplies and electronic light  
ballasts. These high voltage/high speed transistors offer the following:  
POWER TRANSISTOR  
8.0 AMPERES  
1000 VOLTS  
45 and 125 WATTS  
•
Improved Efficiency Due to Low Base Drive Requirements:  
— High and Flat DC Current Gain h  
— Fast Switching  
FE  
— No Coil Required in Base Circuit for Turn–Off (No Current Tail)  
Tight Parametric Distributions are Consistent Lot–to–Lot  
Two Package Choices: Standard TO–220 or Isolated TO–220  
•
•
•
MJF18008, Case 221D, is UL Recognized at 3500 V  
: File #E69369  
RMS  
MAXIMUM RATINGS  
Rating  
Symbol MJE18008 MJF18008  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Emitter Sustaining Voltage  
Collector–Emitter Breakdown Voltage  
Emitter–Base Voltage  
V
450  
1000  
9.0  
CEO  
V
CES  
EBO  
CASE 221A–06  
TO–220AB  
MJE18008  
V
Collector Current — Continuous  
— Peak(1)  
I
8.0  
16  
C
I
CM  
Base Current — Continuous  
— Peak(1)  
I
4.0  
8.0  
Adc  
B
I
BM  
RMS Isolation Voltage(2) Test No. 1 Per Fig. 22a  
(for 1 sec, R.H. < 30%, Test No. 1 Per Fig. 22b  
V
ISOL  
—
—
—
4500  
3500  
1500  
Volts  
T
C
= 25 C)  
Test No. 1 Per Fig. 22c  
C
Total Device Dissipation  
Derate above 25 C  
(T = 25°C)  
P
D
125  
1.0  
45  
0.36  
Watts  
W/ C  
Operating and Storage Temperature  
T , T  
J stg  
–65 to 150  
C
THERMAL CHARACTERISTICS  
Rating  
Symbol MJE18008 MJF18008  
Unit  
CASE 221D–02  
ISOLATED TO–220 TYPE  
UL RECOGNIZED  
MJF18008  
Thermal Resistance — Junction to Case  
— Junction to Ambient  
R
R
1.0  
62.5  
2.78  
62.5  
C/W  
θJC  
θJA  
Maximum Lead Temperature for Soldering  
Purposes: 1/8″ from Case for 5 Seconds  
T
260  
C
L
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise specified)  
C
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Sustaining Voltage (I = 100 mA, L = 25 mH)  
V
450  
—
—
—
—
Vdc  
µAdc  
µAdc  
C
CEO(sus)  
Collector Cutoff Current (V  
Collector Cutoff Current (V  
= Rated V  
, I = 0)  
I
CEO  
100  
CE  
CEO  
B
= Rated V  
, V  
= 0)  
I
—
—
—
—
—
—
100  
500  
100  
CE  
CES EB  
CES  
(T = 125 C)  
C
C
Collector Cutoff Current (V  
= 800 V, V  
= 0)  
(T = 125 C)  
CE  
EB  
Emitter Cutoff Current (V  
EB  
= 9.0 Vdc, I = 0)  
I
—
—
100  
µAdc  
C
EBO  
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle  
10%.  
(continued)  
(2) Proper strike and creepage distance must be provided.  
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit  
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.  
REV 1  
Motorola, Inc. 1995
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中文翻译

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MJF18008 替代型号

型号 品牌 替代类型 描述 数据表
MJF18008G ONSEMI

完全替代

 NPN Bipolar Power Transistor For Switching Power Supply Applications

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