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MJF3055G PDF预览

MJF3055G

更新时间： 2024-11-03 10:55:43
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管开关局域网
页数 文件大小 规格书
5页 116K
描述
Complementary Silicon Power Transistors

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中文翻译

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MJF3055G 技术参数

是否无铅： 不含铅生命周期：Active
零件包装代码：TO-220AB包装说明：LEAD FREE, PLASTIC, CASE 221D-03, TO-220, FULL PACK-3
针数：3Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：2 weeks风险等级：0.89
其他特性：UL RECOGNIZED外壳连接：ISOLATED
最大集电极电流 (IC)：10 A集电极-发射极最大电压：90 V
配置：SINGLE最小直流电流增益 (hFE)：5
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
JESD-609代码：e3元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：260
极性/信道类型：NPN最大功率耗散 (Abs)：30 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：NO端子面层：Tin (Sn)
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：40晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：2 MHz
Base Number Matches：1

MJF3055G 数据手册

 浏览型号MJF3055G的Datasheet PDF文件第2页浏览型号MJF3055G的Datasheet PDF文件第3页浏览型号MJF3055G的Datasheet PDF文件第4页浏览型号MJF3055G的Datasheet PDF文件第5页 
MJF3055 (NPN),  
MJF2955 (PNP)  
Complementary  
Silicon Power Transistors  
Specifically designed for general purpose amplifier and switching  
applications.  
http://onsemi.com  
Features  
COMPLEMENTARY SILICON  
POWER TRANSISTORS  
10 AMPERES  
• Isolated Overmold Package (1500 Volts RMS Min)  
• Electrically Similar to the Popular MJE3055T and MJE2955T  
• Collector−Emitter Sustaining Voltage − V  
• 10 Amperes Rated Collector Current  
• No Isolating Washers Required  
90 Volts  
CEO(sus)  
90 VOLTS, 30 WATTS  
• Reduced System Cost  
• UL Recognized, File #E69369, to 3500 V  
• Epoxy Meets UL 94 V−0 at 0.125 in  
Isolation  
RMS  
• ESD Ratings: Machine Model, C; u400 V  
TO−220 FULLPACK  
CASE 221D  
Human Body Model, 3B; u8000 V  
• Pb−Free Packages are Available*  
STYLE 2  
MAXIMUM RATINGS  
1
2
3
Rating  
Symbol  
Value  
90  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
Collector−Emitter Sustaining Voltage  
Collector−Emitter Breakdown Voltage  
Base−Emitter Voltage  
V
CEO(sus)  
MARKING DIAGRAM  
V
90  
CES  
EBO  
V
5.0  
10  
Collector Current − Continuous  
Base Current − Continuous  
I
C
I
B
6.0  
RMS Isolation Voltage (Note 3)  
V
ISOL  
V
RMS  
Fxx55G  
AYWW  
(t = 0.3 sec, R.H. ≤ 30%, T = 25_C)  
4500  
A
Per Figure 5  
Total Power Dissipation @ T = 25_C (Note 2)  
P
P
30  
W
C
D
0.25  
W/_C  
Derate above 25_C  
Total Power Dissipation @ T = 25_C  
2.0  
W
A
D
0.016 W/_C  
Derate above 25_C  
Operating and Storage Temperature Range  
T , T  
J
–55 to  
+150  
_C  
stg  
Fxx55 = Specific Device Code  
xx= 29 or 30  
THERMAL CHARACTERISTICS  
G
A
Y
= Pb−Free Package  
= Assembly Location  
= Year  
Characteristic  
Symbol  
Max  
4.0  
Unit  
_C/W  
_C/W  
_C  
Thermal Resistance, Junction−to−Case (Note 2)  
Thermal Resistance, Junction−to−Ambient  
Lead Temperature for Soldering Purposes  
R
q
JC  
WW  
= Work Week  
R
q
JA  
62.5  
260  
T
L
ORDERING INFORMATION  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
Device  
MJF2955  
MJF2955G  
Package  
Shipping  
TO−220 FULLPACK 50 Units/Rail  
TO−220 FULLPACK 50 Units/Rail  
(Pb−Free)  
1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle v 10%.  
2. Measurement made with thermocouple contacting the bottom insulated  
surface (in a location beneath the die), the devices mounted on a heatsink with  
thermal grease and a mounting torque of ≥ 6 in. lbs.  
MJF3055  
TO−220 FULLPACK 50 Units/Rail  
3. Proper strike and creepage distance must be provided.  
MJF3055G  
TO−220 FULLPACK 50 Units/Rail  
(Pb−Free)  
*For additional information on our Pb−Free strategy and soldering details,  
please download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2008  
1
Publication Order Number:  
July, 2008 − Rev. 7  
MJF3055/D  
 
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中文翻译

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MJF3055G 替代型号

型号 品牌 替代类型 描述 数据表
MJF3055 ONSEMI

完全替代

 COMPLEMENTARY SILICON POWER TRANSISTORS
NTE331 NTE

功能相似

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