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MJF45H11 PDF预览

MJF45H11

更新时间: 2024-11-02 22:33:03
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管
页数 文件大小 规格书
8页 84K
描述
Complementary Power Transistors

MJF45H11 技术参数

是否无铅: 含铅生命周期:Obsolete
零件包装代码:TO-220AB包装说明:CASE 221D-03, ISOLATED TO-220, FULL PACK-3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.27Is Samacsys:N
外壳连接:ISOLATED最大集电极电流 (IC):10 A
集电极-发射极最大电压:80 V配置:SINGLE
最小直流电流增益 (hFE):40JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):240极性/信道类型:PNP
最大功率耗散 (Abs):35 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):40 MHzBase Number Matches:1

MJF45H11 数据手册

 浏览型号MJF45H11的Datasheet PDF文件第2页浏览型号MJF45H11的Datasheet PDF文件第3页浏览型号MJF45H11的Datasheet PDF文件第4页浏览型号MJF45H11的Datasheet PDF文件第5页浏览型号MJF45H11的Datasheet PDF文件第6页浏览型号MJF45H11的Datasheet PDF文件第7页 
MJF44H11 (NPN),  
MJF45H11 (PNP)  
Preferred Devices  
Complementary  
Power Transistors  
For Isolated Package Applications  
http://onsemi.com  
. . . for general purpose power amplification and switching such as  
output or driver stages in applications such as switching regulators,  
converters and power amplifiers.  
SILICON POWER  
TRANSISTORS  
10 AMPERES  
80 VOLTS  
Low Collector-Emitter Saturation Voltage -  
V
CE(sat)  
= 1.0 V (Max) @ 8.0 A  
Fast Switching Speeds  
Complementary Pairs Simplifies Designs  
36 WATTS  
MAXIMUM RATINGS  
Rating  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Symbol  
Value  
80  
Unit  
Vdc  
Vdc  
Adc  
MARKING DIAGRAM  
V
CEO  
V
EB  
5
Collector Current - Continuous  
- Peak  
I
C
10  
20  
STYLE 2:  
PIN 1. BASE  
2. COLLECTOR  
3. EMITTER  
F4xH11  
LLYWW  
Total Power Dissipation  
P
D
@ T = 25°C  
C
36  
1.67  
Watts  
W/°C  
1
2
Derate above 25°C  
3
Total Power Dissipation  
P
D
ISOLATED TO-220  
CASE 221D  
@ T = 25°C  
A
2.0  
0.016  
Watts  
W/°C  
Derate above 25°C  
PLASTIC  
Operating and Storage Junction  
Temperature Range  
T , T  
- 55 to  
150  
°C  
J
stg  
F4xH11 = Specific Device Code  
x
LL  
Y
= 4 or 5  
= Location Code  
= Year  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
3.5  
Unit  
°C/W  
°C/W  
WW  
= Work Week  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
R
q
JC  
JA  
R
62.5  
q
ORDERING INFORMATION  
Device  
Package  
TO-220  
TO-220  
Shipping  
MJF44H11  
MJF45H11  
50 Units/Rail  
50 Units/Rail  
Preferred devices are recommended choices for future use  
and best overall value.  
Semiconductor Components Industries, LLC, 2002  
1
Publication Order Number:  
December, 2002 - Rev. 2  
MJF44H11/D  

MJF45H11 替代型号

型号 品牌 替代类型 描述 数据表
MJF45H11G ONSEMI

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