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MJH11018 PDF预览

MJH11018

更新时间: 2024-11-22 22:30:07
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管
页数 文件大小 规格书
6页 214K
描述
15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150, 200, 250 VOLTS 150 WATTS

MJH11018 技术参数

生命周期:Transferred包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:unknown风险等级:5.29
外壳连接:COLLECTOR最大集电极电流 (IC):15 A
基于收集器的最大容量:400 pF集电极-发射极最大电压:150 V
配置:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR最小直流电流增益 (hFE):100
JEDEC-95代码:TO-218JESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:NPN
功耗环境最大值:150 W最大功率耗散 (Abs):150 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):3 MHzVCEsat-Max:4 V
Base Number Matches:1

MJH11018 数据手册

 浏览型号MJH11018的Datasheet PDF文件第2页浏览型号MJH11018的Datasheet PDF文件第3页浏览型号MJH11018的Datasheet PDF文件第4页浏览型号MJH11018的Datasheet PDF文件第5页浏览型号MJH11018的Datasheet PDF文件第6页 
Order this document  
by MJH11017/D  
SEMICONDUCTOR TECHNICAL DATA  
. . . designed for use as general purpose amplifiers, low frequency switching and  
motor control applications.  
High DC Current Gain @ 10 Adc — h  
Collector–Emitter Sustaining Voltage  
= 400 Min (All Types)  
FE  
V
V
V
= 150 Vdc (Min) — MJH11018, 17  
= 200 Vdc (Min) — MJH11020, 19  
= 250 Vdc (Min) — MJH11022, 21  
CEO(sus)  
CEO(sus)  
CEO(sus)  
Low Collector–Emitter Saturation Voltage  
V
V
= 1.2 V (Typ) @ I = 5.0 A  
CE(sat)  
CE(sat)  
C
= 1.8 V (Typ) @ I = 10 A  
C
Monolithic Construction  
MAXIMUM RATINGS  
*Motorola Preferred Device  
MJH  
11018  
11017  
11020  
11019  
11022  
11021  
15 AMPERE  
DARLINGTON  
COMPLEMENTARY SILICON  
POWER TRANSISTORS  
150, 200, 250 VOLTS  
150 WATTS  
Rating  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Symbol  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
V
CEO  
150  
150  
200  
200  
5.0  
250  
250  
V
CB  
V
EB  
Collector Current — Continuous  
— Peak (1)  
I
C
15  
30  
Base Current  
I
B
0.5  
Adc  
Total Device Dissipation @ T = 25 C  
C
Derate Above 25 C  
P
D
150  
1.2  
Watts  
W/ C  
Operating and Storage Junction  
Temperature Range  
T , T  
J stg  
65 to +150  
C
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance. Junction to Case  
R
0.83  
C/W  
θJC  
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle  
10%.  
CASE 340D–01  
160  
140  
120  
100  
80  
60  
40  
20  
0
0
20  
40  
60  
80  
100  
120  
C)  
140  
160  
T
, CASE TEMPERATURE (  
°
C
Figure 1. Power Derating  
Preferred devices are Motorola recommended choices for future use and best overall value.  
Motorola, Inc. 1995

MJH11018 替代型号

型号 品牌 替代类型 描述 数据表
MJH11020G ONSEMI

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