Datasheet > MJH11022

MJH11022

更新时间： 2024-11-02 22:30:07

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摩托罗拉 - MOTOROLA		晶体晶体管开关局域网
页数	文件大小	规格书
6页	214K
描述
15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150, 200, 250 VOLTS 150 WATTS

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替代型号

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MJH11022 数据手册

Order this document

by MJH11017/D

SEMICONDUCTOR TECHNICAL DATA

. . . designed for use as general purpose amplifiers, low frequency switching and

motor control applications.

•

High DC Current Gain @ 10 Adc — h

Collector–Emitter Sustaining Voltage

= 400 Min (All Types)

= 150 Vdc (Min) — MJH11018, 17

= 200 Vdc (Min) — MJH11020, 19

= 250 Vdc (Min) — MJH11022, 21

CEO(sus)

•

Low Collector–Emitter Saturation Voltage

= 1.2 V (Typ) @ I = 5.0 A

CE(sat)

= 1.8 V (Typ) @ I = 10 A

Monolithic Construction

MAXIMUM RATINGS

*Motorola Preferred Device

MJH

11018

11017

11020

11019

11022

11021

15 AMPERE

DARLINGTON

COMPLEMENTARY SILICON

POWER TRANSISTORS

150, 200, 250 VOLTS

150 WATTS

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Symbol

Unit

Vdc

Adc

CEO

150

200

5.0

250

Collector Current — Continuous

— Peak (1)

Base Current

0.5

Adc

Total Device Dissipation @ T = 25 C

Derate Above 25 C

150

1.2

Watts

W/ C

Operating and Storage Junction

Temperature Range

T , T

J stg

–65 to +150

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance. Junction to Case

0.83

C/W

θJC

(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle

10%.

CASE 340D–01

160

140

120

100

120

140

160

, CASE TEMPERATURE (

Figure 1. Power Derating

Preferred devices are Motorola recommended choices for future use and best overall value.

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁵r Power Transistor Device Data

12 3 4 5 6

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MJH11022 替代型号

型号	品牌	替代类型	描述	数据表
MJH11022G	ONSEMI	功能相似	15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150−250 VOLTS, 150 WATT
MJH11022	ONSEMI	功能相似	DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

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