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MJH16006 PDF预览

MJH16006

更新时间: 2024-11-20 10:55:43
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
2页 107K
描述
isc Silicon NPN Power Transistor

MJH16006 数据手册

 浏览型号MJH16006的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistor  
MJH16006  
DESCRIPTION  
· Collector-Emitter Sustaining Voltage-  
: VCEO(SUS) = 450V(Min)  
·High Switching Speed  
APPLICATIONS  
·Designed for high-voltage ,high-speed, power switching in  
inductive circuits where fall time is critical. They are partic-  
ularly suited for line operated switch-mode applications.  
Typical applications:  
·Switching regulators  
·Inverters  
·Solenoid and relay drivers  
·Motor controls  
·Deflection circuits  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
PARAMETER  
VALUE  
850  
450  
6
UNIT  
V
VCEV  
Collector-Emitter Voltage  
VCEO(SUS) Collector-Emitter Voltage  
V
VEBO  
IC  
ICM  
IB  
Emitter-Base Voltage  
V
Collector Current-Continuous  
Collector Current-Peak  
Base Current-Continuous  
Base Current-Peak  
8
A
16  
A
6
A
IBM  
PC  
TJ  
12  
A
Collector Power Dissipation  
@TC=25  
125  
150  
-65~150  
W
Junction Temperature  
Storage Temperature  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
Thermal Resistance,Junction to Case  
1.0  
/W  
Rth j-c  
isc Websitewww.iscsemi.cn  

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