Order this document
by MJH16006A/D
SEMICONDUCTOR TECHNICAL DATA
POWER TRANSISTORS
8 AMPERES
1 kV SWITCHMODE Series
500 VOLTS
150 WATTS
These transistors are designed for high–voltage, high–speed, power switching in
inductive circuits where fall time is critical. They are particularly suited for
line–operated switchmode applications.
Typical Applications:
Features:
•
•
•
•
•
•
Switching Regulators
Inverters
Solenoids
Relay Drivers
Motor Controls
Deflection Circuits
•
•
Collector–Emitter Voltage — V = 1000 Vdc
CEV
Fast Turn–Off Times
80 ns Inductive Fall Time — 100 C (Typ)
120 ns Inductive Crossover Time — 100 C (Typ)
800 ns Inductive Storage Time — 100 C (Typ)
100 C Performance Specified for:
•
Reverse–Biased SOA with Inductive Load
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents
•
•
Extended FBSOA Rating Using Ultra–fast Rectifiers
Extremely High RBSOA Capability
MAXIMUM RATINGS
Rating
Symbol
Value
500
1000
6
Unit
Vdc
Vdc
Vdc
Adc
Collector–Emitter Voltage
Collector–Emitter Voltage
Emitter–Base Voltage
V
CEO
V
CEV
V
EB
Collector Current — Continuous
(1)
I
C
8
16
— Peak
I
CM
CASE 340D–02
Base Current — Continuous
I
6
12
Adc
B
(1)
— Peak
I
BM
Total Power Dissipation @ T = 25 C
P
125
50
1
Watts
C
D
@ T = 100 C
C
Derate above T = 25 C
W/ C
C
C
Operating and Storage Junction
Temperature Range
T , T
J
–55 to 150
stg
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
1
Unit
C/W
C
Thermal Resistance, Junction to Case
R
θJC
Lead Temperature for Soldering Purposes:
1/8″ from Case for 5 Seconds
T
L
275
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
REV 4
MMoototorroollaa, IBncip. 1o9la96r Power Transistor Device Data
1