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MJH16018 PDF预览

MJH16018

更新时间: 2024-11-03 10:55:43
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
2页 107K
描述
isc Silicon NPN Power Transistor

MJH16018 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.57
Base Number Matches:1

MJH16018 数据手册

 浏览型号MJH16018的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistor  
MJH16018  
DESCRIPTION  
·Collector-Emitter Voltage-  
: VCEO(SUS)= 800V(Min)  
·Fast Turn-Off Time  
APPLICATIONS  
Designed for high-voltage, high-speed , power switching in  
inductive circuits where fall time is critical. They are particu-  
larly suited for line operated switchmode applications as:  
·Switching Regulators  
·Inverters  
·Solenoids  
·Relay Drivers  
·Motor Controls  
·Deflection Circuits  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
VCEV  
VCEO(SUS)  
VEBO  
IC  
PARAMETER  
Collector-Emitter Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VALUE  
1500  
800  
6
UNIT  
V
V
V
Collector Current-Continuous  
Collector Current-Peak  
Base Current-Continuous  
Base Current-Peak  
10  
A
ICM  
15  
A
IB  
8
A
IBM  
12  
A
Collector Power Dissipation  
@TC=25  
Collector Power Dissipation  
@TC=100℃  
150  
50  
PC  
W
Junction Temperature  
150  
-55~150  
Tj  
Storage Temperature Range  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
Thermal Resistance,Junction to Case  
1.0  
/W  
R(th)j-c  
isc Websitewww.iscsemi.cn  

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