生命周期: | Transferred | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | unknown | 风险等级: | 5.29 |
Is Samacsys: | N | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 20 A | 基于收集器的最大容量: | 600 pF |
集电极-发射极最大电压: | 100 V | 配置: | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
最小直流电流增益 (hFE): | 100 | JEDEC-95代码: | TO-218 |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | PNP | 功耗环境最大值: | 160 W |
最大功率耗散 (Abs): | 160 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 4 MHz |
VCEsat-Max: | 3 V | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
MJH6287G | ONSEMI |
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