5秒后页面跳转
MJH6284 PDF预览

MJH6284

更新时间: 2024-09-22 22:30:07
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管放大器局域网
页数 文件大小 规格书
6页 212K
描述
DARLINGTON 20 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 80, 100 VOLTS 160 WATTS

MJH6284 技术参数

是否Rohs认证: 不符合生命周期:Transferred
Reach Compliance Code:unknown风险等级:5.81
外壳连接:COLLECTOR最大集电极电流 (IC):20 A
基于收集器的最大容量:400 pF集电极-发射极最大电压:100 V
配置:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR最小直流电流增益 (hFE):100
JEDEC-95代码:TO-218JESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:NPN
功耗环境最大值:160 W最大功率耗散 (Abs):160 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):4 MHzVCEsat-Max:3 V
Base Number Matches:1

MJH6284 数据手册

 浏览型号MJH6284的Datasheet PDF文件第2页浏览型号MJH6284的Datasheet PDF文件第3页浏览型号MJH6284的Datasheet PDF文件第4页浏览型号MJH6284的Datasheet PDF文件第5页浏览型号MJH6284的Datasheet PDF文件第6页 
Order this document  
by MJH6282/D  
SEMICONDUCTOR TECHNICAL DATA  
. . . designed for general–purpose amplifier and low–speed switching motor control  
applications.  
Similar to the Popular NPN 2N6282, 2N6283, 2N6284 and the PNP 2N6285,  
2N6286, 2N6287  
Rugged RBSOA Characteristics  
Monolithic Construction with Built–in Collector–Emitter Diode  
*Motorola Preferred Device  
MAXIMUM RATINGS  
MJH6282 MJH6283 MJH6284  
MJH6285 MJH6286 MJH6287  
DARLINGTON  
20 AMPERE  
COMPLEMENTARY SILICON  
POWER TRANSISTORS  
60, 80, 100 VOLTS  
160 WATTS  
Rating  
Symbol  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
V
CEO  
60  
60  
80  
80  
100  
100  
V
CB  
V
EB  
5.0  
Collector Current — Continuous  
Peak  
I
C
20  
40  
Base Current  
I
B
0.5  
Adc  
Total Device Dissipation @  
P
Watts  
D
T
= 25 C  
160  
1.28  
C
Derate above 25 C  
W/ C  
C
Operating and Storage Junction  
Temperature Range  
T , T  
J
65 to +150  
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
CASE 340D–01  
Thermal Resistance, Junction to Case  
R
0.78  
C/W  
θJC  
160  
140  
120  
100  
80  
60  
40  
20  
0
0
25  
50  
75  
100  
125  
150  
C)  
175  
200  
T
, CASE TEMPERATURE (°  
C
Figure 1. Power Derating  
Preferred devices are Motorola recommended choices for future use and best overall value.  
Motorola, Inc. 1995

MJH6284 替代型号

型号 品牌 替代类型 描述 数据表
MJH6284G ONSEMI

功能相似

DARLINGTON 20 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 100 VOLTS, 160 WATTS
MJH6284 ONSEMI

功能相似

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

与MJH6284相关器件

型号 品牌 获取价格 描述 数据表
MJH6284_06 ONSEMI

获取价格

DARLINGTON 20 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 100 VOLTS, 160 WATTS
MJH6284G ONSEMI

获取价格

DARLINGTON 20 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 100 VOLTS, 160 WATTS
MJH6285 MOTOROLA

获取价格

DARLINGTON 20 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 80, 100 VOLTS 160 WATTS
MJH6286 MOTOROLA

获取价格

DARLINGTON 20 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 80, 100 VOLTS 160 WATTS
MJH6287 MOTOROLA

获取价格

DARLINGTON 20 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 80, 100 VOLTS 160 WATTS
MJH6287 ONSEMI

获取价格

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
MJH6287 NJSEMI

获取价格

Trans Darlington PNP 100V 20A 3-Pin(3+Tab) SOT-93 Rail
MJH6287G ONSEMI

获取价格

DARLINGTON 20 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 100 VOLTS, 160 WATTS
MJHK MMD

获取价格

MJHK Series 3.2X5 Ceramic SMD Oscillator
MJHK_12 MMD

获取价格

MJHK Series 3.2X5 Ceramic SMD Oscillator