是否Rohs认证: | 不符合 | 生命周期: | Transferred |
Reach Compliance Code: | unknown | 风险等级: | 5.81 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 20 A |
基于收集器的最大容量: | 400 pF | 集电极-发射极最大电压: | 100 V |
配置: | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | 最小直流电流增益 (hFE): | 100 |
JEDEC-95代码: | TO-218 | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | NPN |
功耗环境最大值: | 160 W | 最大功率耗散 (Abs): | 160 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 4 MHz | VCEsat-Max: | 3 V |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
MJH6284G | ONSEMI |
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MJH6284_06 | ONSEMI |
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MJH6287 | MOTOROLA |
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MJH6287 | NJSEMI |
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MJH6287G | ONSEMI |
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MJHK | MMD |
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