Datasheet > MJIA42

MJIA42

更新时间： 2024-11-04 17:00:51

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	300K
描述
300V,0.5A,General Purpose NPN Bipolar Transistor

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MJIA42 数据手册

Product Specification

NPN Silicon Epitaxial Planar Transistor

MJIA42

FEATURES



Collector-Emitter voltage:V_CEO=300V.

Collector current up to 500mA.

Complement to MJIA92.

Small flat package.

Power Dissipation: P_D(max)=1W.

APPLICATIONS



High voltage transistor.

TO-251

Ordering Information

Part Number

Package

Shipping

Marking Code

MJIA42

TO-251

80 pcs / Tube

MJIA42

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

UNIT

collector-base voltage

collector-emitter voltage

emitter-base voltage

collector current (DC)

300

0.5

R_θJA

Thermal resistance junction to air

Thermal resistance junction to case

Thermal resistance junction to case top

Collector Power Dissipation

°C /W

R_θJC

12.5

R_ψjt

P_D

°C /W

T_j,T_stg

junction and storage temperature

-55 to +150

°C

STM0669A: July 2022

www.gmesemi.com

12 3 4

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