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MJH6284_06

更新时间： 2024-11-20 03:45:47
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
5页 82K
描述
DARLINGTON 20 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 100 VOLTS, 160 WATTS

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中文翻译

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MJH6284_06 数据手册

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MJH6284ꢀ(NPN),  
MJH6284ꢀ(PNP)  
Preferred Device  
Darlington Complementary  
Silicon Power Transistors  
These devices are designed for general−purpose amplifier and  
low−speed switching motor control applications.  
http://onsemi.com  
Features  
DARLINGTON 20 AMPERE  
COMPLEMENTARY SILICON  
POWER TRANSISTORS  
100 VOLTS, 160 WATTS  
• Similar to the Popular NPN 2N6284 and the PNP 2N6287  
• Rugged RBSOA Characteristics  
• Monolithic Construction with Built−in Collector−Emitter Diode  
• Pb−Free Packages are Available*  
MAXIMUM RATINGS  
MARKING  
DIAGRAM  
Rating  
Collector−Emitter Voltage  
Collector−Base Voltage  
Emitter−Base Voltage  
Symbol  
Max  
100  
100  
5.0  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
V
CEO  
V
CB  
EB  
V
SOT−93  
(TO−218)  
AYWWG  
MJH628x  
Collector Current − Continuous  
− Peak  
I
20  
40  
C
CASE 340D  
Base Current  
I
0.5  
Adc  
B
Total Device Dissipation @ T = 25_C  
P
160  
1.28  
W
C
D
Derate above 25_C  
W/_C  
_C  
Operating and Storage Junction  
Temperature Range  
T , T  
J
–ꢀ65 to +ꢀ150  
stg  
A
Y
= Assembly Location  
= Year  
THERMAL CHARACTERISTICS  
WW  
G
= Work Week  
= Pb−Free Package  
Characteristic  
Symbol  
Max  
Unit  
MJH628x = Device Code  
x = 4 or 7  
Thermal Resistance, Junction−to−Case  
R
0.78  
_C/W  
q
JC  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
ORDERING INFORMATION  
Device  
Package  
Shipping  
160  
140  
MJH6284  
SOT−93  
30 Units / Rail  
30 Units / Rail  
MJH6284G  
SOT−93  
(Pb−Free)  
120  
100  
80  
MJH6287  
SOT−93  
30 Units / Rail  
30 Units / Rail  
MJH6287G  
SOT−93  
(Pb−Free)  
60  
Preferred devices are recommended choices for future use  
and best overall value.  
40  
20  
0
0
25  
50  
75  
100  
125  
150  
175  
200  
T , CASE TEMPERATURE (°C)  
C
Figure 1. Power Derating  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
July, 2006 − Rev. 5  
MJH6284/D  
12345

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