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MJH11020G PDF预览

MJH11020G

更新时间： 2024-11-03 03:49:15
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管开关局域网
页数 文件大小 规格书
6页 86K
描述
15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150−250 VOLTS, 150 WATTS

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MJH11020G 技术参数

是否无铅：不含铅生命周期：Active
零件包装代码：TO-218包装说明：LEAD FREE, CASE 340D-02, 3 PIN
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：11 weeks
风险等级：0.88Is Samacsys：N
外壳连接：COLLECTOR最大集电极电流 (IC)：15 A
集电极-发射极最大电压：200 V配置：DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE)：100JEDEC-95代码：TO-247
JESD-30 代码：R-PSFM-T3JESD-609代码：e3
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：260极性/信道类型：NPN
最大功率耗散 (Abs)：150 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：NO
端子面层：Tin (Sn)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：40
晶体管应用：SWITCHING晶体管元件材料：SILICON
标称过渡频率 (fT)：3 MHzBase Number Matches：1

MJH11020G 数据手册

 浏览型号MJH11020G的Datasheet PDF文件第2页浏览型号MJH11020G的Datasheet PDF文件第3页浏览型号MJH11020G的Datasheet PDF文件第4页浏览型号MJH11020G的Datasheet PDF文件第5页浏览型号MJH11020G的Datasheet PDF文件第6页 
MJH11017, MJH11019,  
MJH11021ꢀ(PNP)  
MJH11018, MJH11020,  
MJH11022ꢀ(NPN)  
Preferred Device  
Complementary Darlington  
Silicon Power Transistors  
http://onsemi.com  
These devices are designed for use as general purpose amplifiers,  
low frequency switching and motor control applications.  
15 AMPERE DARLINGTON  
COMPLEMENTARY SILICON  
POWER TRANSISTORS  
Features  
• High DC Current Gain @ 10 Adc — h = 400 Min (All Types)  
FE  
150−250 VOLTS, 150 WATTS  
• Collector−Emitter Sustaining Voltage  
MARKING  
DIAGRAM  
V
= 150 Vdc (Min) — MJH11018, 17  
CEO(sus)  
= 200 Vdc (Min) — MJH11020, 19  
= 250 Vdc (Min) — MJH11022, 21  
• Low Collector−Emitter Saturation Voltage  
V
CE(sat)  
= 1.2 V (Typ) @ I = 5.0 A  
C
SOT−93  
(TO−218)  
= 1.8 V (Typ) @ I = 10 A  
C
AYWWG  
MJH110xx  
CASE 340D  
STYLE 1  
• Monolithic Construction  
• Pb−Free Packages are Available*  
MAXIMUM RATINGS  
A
Y
= Assembly Location  
= Year  
Rating  
Symbol  
Max  
Unit  
WW  
G
= Work Week  
= Pb−Free Package  
Collector−Emitter Voltage  
V
Vdc  
CEO  
MJH11018, MJH11017  
MJH11020, MJH11019  
MJH11022, MJH11021  
150  
200  
250  
MJH110xx = Device Code  
xx = 17, 19, 21, 18, 20, 22  
Collector−Base Voltage  
V
Vdc  
CB  
ORDERING INFORMATION  
MJH11018, MJH11017  
MJH11020, MJH11019  
MJH11022, MJH11021  
150  
200  
250  
Device  
Package  
Shipping  
MJH11017  
SOT−93  
30 Units / Rail  
30 Units / Rail  
Emitter−Base Voltage  
V
5.0  
Vdc  
Adc  
EB  
MJH11017G  
SOT−93  
(Pb−Free)  
Collector Current − Continuous  
− Peak (Note 1)  
I
15  
30  
C
B
MJH11018  
SOT−93  
30 Units / Rail  
30 Units / Rail  
Base Current  
I
0.5  
Adc  
MJH11018G  
SOT−93  
(Pb−Free)  
Total Device Dissipation @ T = 25_C  
P
150  
1.2  
W
C
D
Derate above 25_C  
W/_C  
_C  
MJH11019  
SOT−93  
30 Units / Rail  
30 Units / Rail  
Operating and Storage Junction Temperature T , T  
–ꢀ65 to  
+ꢀ150  
J
stg  
MJH11019G  
SOT−93  
(Pb−Free)  
Range  
THERMAL CHARACTERISTICS  
MJH11020  
SOT−93  
30 Units / Rail  
30 Units / Rail  
Characteristic  
Symbol  
Max  
Unit  
MJH11020G  
SOT−93  
(Pb−Free)  
Thermal Resistance, Junction−to−Case  
R
0.83  
_C/W  
q
JC  
MJH11021  
SOT−93  
30 Units / Rail  
30 Units / Rail  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle v 10%.  
MJH11021G  
SOT−93  
(Pb−Free)  
MJH11022  
SOT−93  
30 Units / Rail  
30 Units / Rail  
MJH11022G  
SOT−93  
(Pb−Free)  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
July, 2006 − Rev. 6  
MJH11017/D  
 
123456

中文翻译

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MJH11020G 替代型号

型号 品牌 替代类型 描述 数据表
MJH11018G ONSEMI

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 15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150−250 VOLTS, 150 WATT
MJH11020 ONSEMI

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MJH11018 ONSEMI

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