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MJH11021G

更新时间： 2024-02-02 20:58:58
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
6页 86K
描述
15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150−250 VOLTS, 150 WATTS

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MJH11021G 数据手册

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MJH11017, MJH11019,  
MJH11021ꢀ(PNP)  
MJH11018, MJH11020,  
MJH11022ꢀ(NPN)  
Preferred Device  
Complementary Darlington  
Silicon Power Transistors  
http://onsemi.com  
These devices are designed for use as general purpose amplifiers,  
low frequency switching and motor control applications.  
15 AMPERE DARLINGTON  
COMPLEMENTARY SILICON  
POWER TRANSISTORS  
Features  
• High DC Current Gain @ 10 Adc — h = 400 Min (All Types)  
FE  
150−250 VOLTS, 150 WATTS  
• Collector−Emitter Sustaining Voltage  
MARKING  
DIAGRAM  
V
= 150 Vdc (Min) — MJH11018, 17  
CEO(sus)  
= 200 Vdc (Min) — MJH11020, 19  
= 250 Vdc (Min) — MJH11022, 21  
• Low Collector−Emitter Saturation Voltage  
V
CE(sat)  
= 1.2 V (Typ) @ I = 5.0 A  
C
SOT−93  
(TO−218)  
= 1.8 V (Typ) @ I = 10 A  
C
AYWWG  
MJH110xx  
CASE 340D  
STYLE 1  
• Monolithic Construction  
• Pb−Free Packages are Available*  
MAXIMUM RATINGS  
A
Y
= Assembly Location  
= Year  
Rating  
Symbol  
Max  
Unit  
WW  
G
= Work Week  
= Pb−Free Package  
Collector−Emitter Voltage  
V
Vdc  
CEO  
MJH11018, MJH11017  
MJH11020, MJH11019  
MJH11022, MJH11021  
150  
200  
250  
MJH110xx = Device Code  
xx = 17, 19, 21, 18, 20, 22  
Collector−Base Voltage  
V
Vdc  
CB  
ORDERING INFORMATION  
MJH11018, MJH11017  
MJH11020, MJH11019  
MJH11022, MJH11021  
150  
200  
250  
Device  
Package  
Shipping  
MJH11017  
SOT−93  
30 Units / Rail  
30 Units / Rail  
Emitter−Base Voltage  
V
5.0  
Vdc  
Adc  
EB  
MJH11017G  
SOT−93  
(Pb−Free)  
Collector Current − Continuous  
− Peak (Note 1)  
I
15  
30  
C
B
MJH11018  
SOT−93  
30 Units / Rail  
30 Units / Rail  
Base Current  
I
0.5  
Adc  
MJH11018G  
SOT−93  
(Pb−Free)  
Total Device Dissipation @ T = 25_C  
P
150  
1.2  
W
C
D
Derate above 25_C  
W/_C  
_C  
MJH11019  
SOT−93  
30 Units / Rail  
30 Units / Rail  
Operating and Storage Junction Temperature T , T  
–ꢀ65 to  
+ꢀ150  
J
stg  
MJH11019G  
SOT−93  
(Pb−Free)  
Range  
THERMAL CHARACTERISTICS  
MJH11020  
SOT−93  
30 Units / Rail  
30 Units / Rail  
Characteristic  
Symbol  
Max  
Unit  
MJH11020G  
SOT−93  
(Pb−Free)  
Thermal Resistance, Junction−to−Case  
R
0.83  
_C/W  
q
JC  
MJH11021  
SOT−93  
30 Units / Rail  
30 Units / Rail  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle v 10%.  
MJH11021G  
SOT−93  
(Pb−Free)  
MJH11022  
SOT−93  
30 Units / Rail  
30 Units / Rail  
MJH11022G  
SOT−93  
(Pb−Free)  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
July, 2006 − Rev. 6  
MJH11017/D  
 
123456

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MJH11021G 替代型号

型号 品牌 替代类型 描述 数据表
MJH11021 ONSEMI

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