MJH11017, MJH11019,
MJH11021ꢀ(PNP)
MJH11018, MJH11020,
MJH11022ꢀ(NPN)
Preferred Device
Complementary Darlington
Silicon Power Transistors
http://onsemi.com
These devices are designed for use as general purpose amplifiers,
low frequency switching and motor control applications.
15 AMPERE DARLINGTON
COMPLEMENTARY SILICON
POWER TRANSISTORS
Features
• High DC Current Gain @ 10 Adc — h = 400 Min (All Types)
FE
150−250 VOLTS, 150 WATTS
• Collector−Emitter Sustaining Voltage
MARKING
DIAGRAM
V
= 150 Vdc (Min) — MJH11018, 17
CEO(sus)
= 200 Vdc (Min) — MJH11020, 19
= 250 Vdc (Min) — MJH11022, 21
• Low Collector−Emitter Saturation Voltage
V
CE(sat)
= 1.2 V (Typ) @ I = 5.0 A
C
SOT−93
(TO−218)
= 1.8 V (Typ) @ I = 10 A
C
AYWWG
MJH110xx
CASE 340D
STYLE 1
• Monolithic Construction
• Pb−Free Packages are Available*
MAXIMUM RATINGS
A
Y
= Assembly Location
= Year
Rating
Symbol
Max
Unit
WW
G
= Work Week
= Pb−Free Package
Collector−Emitter Voltage
V
Vdc
CEO
MJH11018, MJH11017
MJH11020, MJH11019
MJH11022, MJH11021
150
200
250
MJH110xx = Device Code
xx = 17, 19, 21, 18, 20, 22
Collector−Base Voltage
V
Vdc
CB
ORDERING INFORMATION
MJH11018, MJH11017
MJH11020, MJH11019
MJH11022, MJH11021
150
200
250
Device
Package
Shipping
MJH11017
SOT−93
30 Units / Rail
30 Units / Rail
Emitter−Base Voltage
V
5.0
Vdc
Adc
EB
MJH11017G
SOT−93
(Pb−Free)
Collector Current − Continuous
− Peak (Note 1)
I
15
30
C
B
MJH11018
SOT−93
30 Units / Rail
30 Units / Rail
Base Current
I
0.5
Adc
MJH11018G
SOT−93
(Pb−Free)
Total Device Dissipation @ T = 25_C
P
150
1.2
W
C
D
Derate above 25_C
W/_C
_C
MJH11019
SOT−93
30 Units / Rail
30 Units / Rail
Operating and Storage Junction Temperature T , T
–ꢀ65 to
+ꢀ150
J
stg
MJH11019G
SOT−93
(Pb−Free)
Range
THERMAL CHARACTERISTICS
MJH11020
SOT−93
30 Units / Rail
30 Units / Rail
Characteristic
Symbol
Max
Unit
MJH11020G
SOT−93
(Pb−Free)
Thermal Resistance, Junction−to−Case
R
0.83
_C/W
q
JC
MJH11021
SOT−93
30 Units / Rail
30 Units / Rail
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle v 10%.
MJH11021G
SOT−93
(Pb−Free)
MJH11022
SOT−93
30 Units / Rail
30 Units / Rail
MJH11022G
SOT−93
(Pb−Free)
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Preferred devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
July, 2006 − Rev. 6
MJH11017/D