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MJF47 PDF预览

MJF47

更新时间： 2024-11-03 10:55:43
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管开关局域网
页数 文件大小 规格书
6页 131K
描述
High Voltage Power Transistor Isolated Package Applications

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中文翻译

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MJF47 技术参数

是否无铅： 含铅生命周期：Obsolete
零件包装代码：TO-220AB包装说明：CASE 221D-03, TO-220, FULL PACK-3
针数：3Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
风险等级：5.27其他特性：UL RECOGNIZED
外壳连接：ISOLATED最大集电极电流 (IC)：1 A
集电极-发射极最大电压：250 V配置：SINGLE
最小直流电流增益 (hFE)：10JEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3JESD-609代码：e0
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：240极性/信道类型：NPN
最大功率耗散 (Abs)：28 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：NO
端子面层：Tin/Lead (Sn/Pb)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：30
晶体管应用：SWITCHING晶体管元件材料：SILICON
标称过渡频率 (fT)：10 MHzBase Number Matches：1

MJF47 数据手册

 浏览型号MJF47的Datasheet PDF文件第2页浏览型号MJF47的Datasheet PDF文件第3页浏览型号MJF47的Datasheet PDF文件第4页浏览型号MJF47的Datasheet PDF文件第5页浏览型号MJF47的Datasheet PDF文件第6页 
MJF47  
High Voltage Power  
Transistor  
Isolated Package Applications  
Designed for line operated audio output amplifiers, switching power  
supply drivers and other switching applications, where the mounting  
surface of the device is required to be electrically isolated from the  
heatsink or chassis.  
http://onsemi.com  
NPN SILICON  
POWER TRANSISTOR  
1 AMPERE  
Features  
• Electrically Similar to the Popular TIP47  
250 VOLTS, 28 WATTS  
• 250 V  
CEO(sus)  
• 1 A Rated Collector Current  
• No Isolating Washers Required  
• Reduced System Cost  
• UL Recognized, File #E69369, to 3500 V  
• Pb−Free Package is Available*  
Isolation  
RMS  
MAXIMUM RATINGS  
TO−220 FULLPACK  
CASE 221D  
STYLE 2  
Rating  
Collector−Emitter Voltage  
Collector−Base Voltage  
Emitter−Base Voltage  
Symbol  
Value  
250  
350  
5
Unit  
Vdc  
Vdc  
Vdc  
V
1
2
3
V
CEO  
V
CB  
MARKING DIAGRAM  
V
EB  
RMS Isolation Voltage (Note 1)  
V
ISOL  
Test No. 1 Per Figure 10  
Test No. 2 Per Figure 11  
Test No. 3 Per Figure 12  
4500  
3500  
1500  
(for 1 sec, R.H. < 30%, T = 25_C)  
A
Collector Current − Continuous  
− Peak  
I
C
1
2
Adc  
Adc  
MJF47G  
AYWW  
Base Current − Continuous  
I
B
0.6  
Total Power Dissipation (Note 2) @ T = 25_C  
P
40  
W
C
D
0.31  
W/_C  
Derate above 25_C  
Total Power Dissipation @ T = 25_C  
P
D
2.0  
0.016  
W
A
Derate above 25_C  
W/_C  
Operating and Storage Temperature Range  
THERMAL CHARACTERISTICS  
T , T  
J
–65 to +150  
_C  
stg  
G
A
Y
= Pb−Free Package  
= Assembly Location  
= Year  
Characteristic  
Symbol  
Max  
62.5  
4.4  
Unit  
_C/W  
_C/W  
_C  
WW = Work Week  
Thermal Resistance, Junction−to−Ambient  
Thermal Resistance, Junction−to−Case (Note 2)  
Lead Temperature for Soldering Purposes  
R
q
JA  
R
q
JC  
ORDERING INFORMATION  
T
L
260  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
Device  
MJF47  
MJF47G  
Package  
Shipping  
TO−220 FULLPACK 50 Units/Rail  
TO−220 FULLPACK 50 Units/Rail  
(Pb−Free)  
1. Proper strike and creepage distance must be provided.  
2. Measurement made with thermocouple contacting the bottom insulated  
surface (in a location beneath the die), the devices mounted on a heatsink with  
thermal grease and a mounting torque of ≥ 6 in. lbs.  
*For additional information on our Pb−Free strategy  
and soldering details, please download the  
ON Semiconductor Soldering and Mounting  
Techniques Reference Manual, SOLDERRM/D.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
April, 2006 − Rev. 5  
MJF47/D  
 
123456

中文翻译

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MJF47 替代型号

型号 品牌 替代类型 描述 数据表
MJF47G ONSEMI

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