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MJF6668 PDF预览

MJF6668

更新时间: 2024-11-02 22:33:03
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管开关局域网
页数 文件大小 规格书
8页 341K
描述
COMPLEMENTARY SILICON POWER DARLINGTONS

MJF6668 技术参数

是否无铅: 含铅生命周期:Obsolete
零件包装代码:TO-220AB包装说明:CASE 221D-03, TO-220, FULL PACK-3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.27Is Samacsys:N
其他特性:UL RECOGNIZED外壳连接:ISOLATED
最大集电极电流 (IC):10 A集电极-发射极最大电压:100 V
配置:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR最小直流电流增益 (hFE):100
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):240
极性/信道类型:PNP最大功率耗散 (Abs):40 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):20 MHz
Base Number Matches:1

MJF6668 数据手册

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Order this document  
by MJF6388/D  
SEMICONDUCTOR TECHNICAL DATA  
For Isolated Package Applications  
*Motorola Preferred Devices  
Designed for general–purpose amplifiers and switching applications, where the  
mounting surface of the device is required to be electrically isolated from the heatsink  
or chassis.  
COMPLEMENTARY  
SILICON  
POWER DARLINGTONS  
10 AMPERES  
Isolated Overmold Package, TO–220 Type  
Electrically Similar to the Popular 2N6388, 2N6668, TIP102 and TIP107  
100 VOLTS  
40 WATTS  
100 V  
CEO(sus)  
10 A Rated Collector Current  
No Isolating Washers Required  
Reduced System Cost  
High DC Current Gain — 1000 (Min) @ I = 5.0 Adc  
C
High Isolation Voltage (up to 4500 VRMS)  
Case 221D is UL Recognized at 3500 VRMS: File #E69369  
CASE 221D–02  
UL RECOGNIZED  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
V
100  
Vdc  
CEO  
V
100  
5.0  
Vdc  
Vdc  
V
CB  
EB  
V
RMS Isolation Voltage (1)  
(for 1 sec, R.H. < 30%, T = 25 C)  
A
Test No. 1 Per Figure 14  
Test No. 2 Per Figure 15  
Test No. 3 Per Figure 16  
V
ISOL  
4500  
3500  
1500  
Collector Current — Continuous  
— Peak(2)  
I
10  
15  
Adc  
Adc  
C
Base Current  
I
1.0  
B
Total Power Dissipation* @ T = 25 C  
C
Derate above 25 C  
P
D
40  
0.31  
Watts  
W/ C  
Total Power Dissipation @ T = 25 C  
A
Derate above 25 C  
P
D
2.0  
0.016  
Watts  
W/ C  
Operating and Storage Junction Temperature Range  
T , T  
65 to +150  
C
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, Junction to Case*  
R
R
3.2  
C/W  
θJC  
Thermal Resistance, Junction to Ambient  
Lead Temperature for Soldering Purpose  
62.5  
260  
C/W  
C
θJA  
T
L
(1) Proper strike and creepage distance must be provided.  
(2) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle  
10%.  
* Measurementmadewiththermocouplecontactingthebottominsulatedmountingsurfaceofthepackage(inalocationbeneaththedie),thedevice  
mounted on a heatsink, thermal grease applied and a mounting torque of 6 to 8 in lbs.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 3  
Motorola, Inc. 1995

MJF6668 替代型号

型号 品牌 替代类型 描述 数据表
MJF127G ONSEMI

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COMPLEMENTARY SILICON POWER DARLINGTONS 5.0 A, 100 V, 30 W
MJF6668G ONSEMI

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COMPLEMENTARY SILICON POWER DARLINGTONS 10 AMPERES 100 VOLTS, 40 WATTS

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