5秒后页面跳转
MJF6388_06 PDF预览

MJF6388_06

更新时间: 2024-11-19 03:45:43
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 160K
描述
COMPLEMENTARY SILICON POWER DARLINGTONS 10 AMPERES 100 VOLTS, 40 WATTS

MJF6388_06 数据手册

 浏览型号MJF6388_06的Datasheet PDF文件第2页浏览型号MJF6388_06的Datasheet PDF文件第3页浏览型号MJF6388_06的Datasheet PDF文件第4页浏览型号MJF6388_06的Datasheet PDF文件第5页浏览型号MJF6388_06的Datasheet PDF文件第6页浏览型号MJF6388_06的Datasheet PDF文件第7页 
MJF6388 (NPN),  
MJF6668 (PNP)  
Preferred Device  
Complementary Power  
Darlingtons  
For Isolated Package Applications  
Designed for generalpurpose amplifiers and switching  
applications, where the mounting surface of the device is required to  
be electrically isolated from the heatsink or chassis.  
http://onsemi.com  
COMPLEMENTARY SILICON  
POWER DARLINGTONS  
10 AMPERES  
Features  
Isolated Overmold Package, TO220 Type  
Electrically Similar to the Popular 2N6388, 2N6668, TIP102, and  
TIP107  
100 VOLTS, 40 WATTS  
100 V  
CEO(sus)  
MARKING  
DIAGRAM  
10 A Rated Collector Current  
No Isolating Washers Required  
Reduced System Cost  
High DC Current Gain 1000 (Min) @ I = 5.0 Adc  
C
High Isolation Voltage (up to 4500 VRMS)  
Case 221D is UL Recognized at 3500 VRMS: File #E69369  
PbFree Packages are Available*  
TO220 FULLPACK  
MJF6xy8G  
AYWW  
1
CASE 221D  
STYLE 2  
UL RECOGNIZED  
2
3
MAXIMUM RATINGS  
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Symbol  
Value  
100  
100  
5.0  
Unit  
Vdc  
Vdc  
Vdc  
V
V
CEO  
V
CB  
V
EB  
RMS Isolation Voltage (Note 1)  
V
ISOL  
Test No. 1 Per Figure 14  
Test No. 2 Per Figure 15  
Test No. 3 Per Figure 16  
4500  
3500  
1500  
MJF6xy8 = Specific Device Code  
x = 3 or 6  
y = 6 or 8  
(for 1 sec, R.H. < 30%, T = 25_C)  
A
G
A
Y
= PbFree Package  
= Assembly Location  
= Year  
Collector Current Continuous  
Peak (Note 2)  
I
C
10  
15  
Adc  
Adc  
Base Current Continuous  
I
B
1.0  
WW  
= Work Week  
Total Power Dissipation (Note 3) @ T = 25_C  
P
40  
W
C
D
0.31  
W/_C  
Derate above 25_C  
Total Power Dissipation @ T = 25_C  
P
D
2.0  
0.016  
W
A
ORDERING INFORMATION  
Derate above 25_C  
W/_C  
Operating and Storage Temperature Range  
THERMAL CHARACTERISTICS  
T , T  
J
65 to +150  
_C  
stg  
Device  
Package  
Shipping  
MJF6388  
TO220 FULLPACK 50 Units/Rail  
Characteristic  
Symbol  
Max  
4.0  
Unit  
_C/W  
_C/W  
_C  
MJF6388G  
TO220 FULLPACK 50 Units/Rail  
(PbFree)  
Thermal Resistance, JunctiontoCase (Note 3)  
Thermal Resistance, JunctiontoAmbient  
Lead Temperature for Soldering Purposes  
R
q
JC  
R
62.5  
260  
q
JA  
MJF6668  
TO220 FULLPACK 50 Units/Rail  
T
L
MJF6668G  
TO220 FULLPACK 50 Units/Rail  
(PbFree)  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
1. Proper strike and creepage distance must be provided.  
*For additional information on our PbFree strategy  
and soldering details, please download the  
ON Semiconductor Soldering and Mounting  
Techniques Reference Manual, SOLDERRM/D.  
2. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle v 10%.  
3. Measurement made with thermocouple contacting the bottom insulated  
surface (in a location beneath the die), the devices mounted on a heatsink with  
thermal grease and a mounting torque of 6 in. lbs.  
© Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
April, 2006 Rev. 8  
MJF6388/D  
 

与MJF6388_06相关器件

型号 品牌 获取价格 描述 数据表
MJF6388_08 ONSEMI

获取价格

Complementary Power Darlingtons
MJF6388G ONSEMI

获取价格

COMPLEMENTARY SILICON POWER DARLINGTONS 10 AMPERES 100 VOLTS, 40 WATTS
MJF6668 MOTOROLA

获取价格

COMPLEMENTARY SILICON POWER DARLINGTONS 10 AMPERES 100 VOLTS 40 WATTS
MJF6668 ONSEMI

获取价格

COMPLEMENTARY SILICON POWER DARLINGTONS
MJF6668G ONSEMI

获取价格

COMPLEMENTARY SILICON POWER DARLINGTONS 10 AMPERES 100 VOLTS, 40 WATTS
MJH10012 ISC

获取价格

Silicon NPN Power Transistors
MJH10012 SAVANTIC

获取价格

Silicon NPN Power Transistors
MJH10012 ONSEMI

获取价格

POWER TRANSISTORS DARLINGTON NPN SILICON
MJH10012 NJSEMI

获取价格

Trans Darlington NPN 400V 10A 3-Pin(3+Tab) TO-218
MJH11017 ONSEMI

获取价格

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS