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MJF6388_08

更新时间： 2024-11-19 10:55:43
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 153K
描述
Complementary Power Darlingtons

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中文翻译

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MJF6388_08 数据手册

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MJF6388 (NPN),  
MJF6668 (PNP)  
Preferred Device  
Complementary Power  
Darlingtons  
For Isolated Package Applications  
Designed for general−purpose amplifiers and switching  
applications, where the mounting surface of the device is required to  
be electrically isolated from the heatsink or chassis.  
http://onsemi.com  
COMPLEMENTARY SILICON  
POWER DARLINGTONS  
10 AMPERES  
Features  
• Isolated Overmold Package, TO−220 Type  
• Electrically Similar to the Popular 2N6388, 2N6668, TIP102, and  
TIP107  
100 VOLTS, 40 WATTS  
NPN  
PNP  
• 100 V  
CEO(sus)  
COLLECTOR 2  
COLLECTOR 2  
• 10 A Rated Collector Current  
• No Isolating Washers Required  
• Reduced System Cost  
BASE  
1
BASE  
1
• High DC Current Gain − 1000 (Min) @ I = 5.0 Adc  
C
• High Isolation Voltage (up to 4500 VRMS)  
• Case 221D is UL Recognized at 3500 VRMS: File #E69369  
• Pb−Free Packages are Available*  
EMITTER 3  
EMITTER 3  
MJF6668  
MJF6388  
MAXIMUM RATINGS  
Rating  
Collector−Emitter Voltage  
Collector−Base Voltage  
Emitter−Base Voltage  
Symbol  
Value  
100  
100  
5.0  
Unit  
Vdc  
Vdc  
Vdc  
V
MARKING  
DIAGRAM  
V
CEO  
V
V
CB  
EB  
TO−220 FULLPACK  
CASE 221D  
STYLE 2  
UL RECOGNIZED  
MJF6xy8G  
AYWW  
RMS Isolation Voltage (Note 1)  
V
ISOL  
(t = 0.3 sec, R.H. ≤ 30%, T = 25_C)  
4500  
A
1
Per Figure 14  
2
3
Collector Current − Continuous  
− Peak (Note 2)  
I
C
10  
15  
Adc  
Adc  
MJF6xy8 = Specific Device Code  
x = 3 or 6  
y = 6 or 8  
= Pb−Free Package  
= Assembly Location  
= Year  
Base Current − Continuous  
I
B
1.0  
Total Power Dissipation (Note 3) @ T = 25_C  
P
D
40  
0.31  
W
C
G
A
Y
WW  
Derate above 25_C  
W/_C  
Total Power Dissipation @ T = 25_C  
P
D
2.0  
0.016  
W
A
Derate above 25_C  
W/_C  
= Work Week  
Operating and Storage Temperature Range  
THERMAL CHARACTERISTICS  
T , T  
–65 to +150  
_C  
J
stg  
ORDERING INFORMATION  
Characteristic  
Symbol  
Max  
4.0  
Unit  
_C/W  
_C/W  
_C  
Device  
Package  
Shipping  
Thermal Resistance, Junction−to−Case (Note 3)  
Thermal Resistance, Junction−to−Ambient  
Lead Temperature for Soldering Purposes  
R
q
JC  
MJF6388  
TO−220 FULLPACK 50 Units/Rail  
R
62.5  
260  
q
JA  
MJF6388G  
TO−220 FULLPACK 50 Units/Rail  
(Pb−Free)  
T
L
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
MJF6668  
TO−220 FULLPACK 50 Units/Rail  
MJF6668G  
TO−220 FULLPACK 50 Units/Rail  
(Pb−Free)  
1. Proper strike and creepage distance must be provided.  
2. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle v 10%.  
3. Measurement made with thermocouple contacting the bottom insulated  
surface (in a location beneath the die), the devices mounted on a heatsink with  
thermal grease and a mounting torque of ≥ 6 in. lbs.  
*For additional information on our Pb−Free strategy  
and soldering details, please download the  
ON Semiconductor Soldering and Mounting  
Techniques Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2008  
1
Publication Order Number:  
September, 2008 − Rev. 10  
MJF6388/D  
 
12345678

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