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MJF6668G PDF预览

MJF6668G

更新时间： 2024-09-23 03:45:43
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管开关局域网
页数 文件大小 规格书
8页 160K
描述
COMPLEMENTARY SILICON POWER DARLINGTONS 10 AMPERES 100 VOLTS, 40 WATTS

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MJF6668G 技术参数

是否无铅： 不含铅生命周期：End Of Life
零件包装代码：TO-220AB包装说明：ROHS COMPLIANT, CASE 221D-03, TO-220, FULL PACK-3
针数：3Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
风险等级：5.25Is Samacsys：N
其他特性：UL RECOGNIZED外壳连接：ISOLATED
最大集电极电流 (IC)：10 A集电极-发射极最大电压：100 V
配置：DARLINGTON WITH BUILT-IN DIODE AND RESISTOR最小直流电流增益 (hFE)：100
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
JESD-609代码：e3元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：260
极性/信道类型：PNP最大功率耗散 (Abs)：40 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：NO端子面层：Tin (Sn)
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：40晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：20 MHz
Base Number Matches：1

MJF6668G 数据手册

 浏览型号MJF6668G的Datasheet PDF文件第2页浏览型号MJF6668G的Datasheet PDF文件第3页浏览型号MJF6668G的Datasheet PDF文件第4页浏览型号MJF6668G的Datasheet PDF文件第5页浏览型号MJF6668G的Datasheet PDF文件第6页浏览型号MJF6668G的Datasheet PDF文件第7页 
MJF6388 (NPN),  
MJF6668 (PNP)  
Preferred Device  
Complementary Power  
Darlingtons  
For Isolated Package Applications  
Designed for general−purpose amplifiers and switching  
applications, where the mounting surface of the device is required to  
be electrically isolated from the heatsink or chassis.  
http://onsemi.com  
COMPLEMENTARY SILICON  
POWER DARLINGTONS  
10 AMPERES  
Features  
• Isolated Overmold Package, TO−220 Type  
• Electrically Similar to the Popular 2N6388, 2N6668, TIP102, and  
TIP107  
100 VOLTS, 40 WATTS  
• 100 V  
CEO(sus)  
MARKING  
DIAGRAM  
• 10 A Rated Collector Current  
• No Isolating Washers Required  
• Reduced System Cost  
• High DC Current Gain − 1000 (Min) @ I = 5.0 Adc  
C
• High Isolation Voltage (up to 4500 VRMS)  
• Case 221D is UL Recognized at 3500 VRMS: File #E69369  
• Pb−Free Packages are Available*  
TO−220 FULLPACK  
MJF6xy8G  
AYWW  
1
CASE 221D  
STYLE 2  
UL RECOGNIZED  
2
3
MAXIMUM RATINGS  
Rating  
Collector−Emitter Voltage  
Collector−Base Voltage  
Emitter−Base Voltage  
Symbol  
Value  
100  
100  
5.0  
Unit  
Vdc  
Vdc  
Vdc  
V
V
CEO  
V
CB  
V
EB  
RMS Isolation Voltage (Note 1)  
V
ISOL  
Test No. 1 Per Figure 14  
Test No. 2 Per Figure 15  
Test No. 3 Per Figure 16  
4500  
3500  
1500  
MJF6xy8 = Specific Device Code  
x = 3 or 6  
y = 6 or 8  
(for 1 sec, R.H. < 30%, T = 25_C)  
A
G
A
Y
= Pb−Free Package  
= Assembly Location  
= Year  
Collector Current − Continuous  
− Peak (Note 2)  
I
C
10  
15  
Adc  
Adc  
Base Current − Continuous  
I
B
1.0  
WW  
= Work Week  
Total Power Dissipation (Note 3) @ T = 25_C  
P
40  
W
C
D
0.31  
W/_C  
Derate above 25_C  
Total Power Dissipation @ T = 25_C  
P
D
2.0  
0.016  
W
A
ORDERING INFORMATION  
Derate above 25_C  
W/_C  
Operating and Storage Temperature Range  
THERMAL CHARACTERISTICS  
T , T  
J
–65 to +150  
_C  
stg  
Device  
Package  
Shipping  
MJF6388  
TO−220 FULLPACK 50 Units/Rail  
Characteristic  
Symbol  
Max  
4.0  
Unit  
_C/W  
_C/W  
_C  
MJF6388G  
TO−220 FULLPACK 50 Units/Rail  
(Pb−Free)  
Thermal Resistance, Junction−to−Case (Note 3)  
Thermal Resistance, Junction−to−Ambient  
Lead Temperature for Soldering Purposes  
R
q
JC  
R
62.5  
260  
q
JA  
MJF6668  
TO−220 FULLPACK 50 Units/Rail  
T
L
MJF6668G  
TO−220 FULLPACK 50 Units/Rail  
(Pb−Free)  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
1. Proper strike and creepage distance must be provided.  
*For additional information on our Pb−Free strategy  
and soldering details, please download the  
ON Semiconductor Soldering and Mounting  
Techniques Reference Manual, SOLDERRM/D.  
2. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle v 10%.  
3. Measurement made with thermocouple contacting the bottom insulated  
surface (in a location beneath the die), the devices mounted on a heatsink with  
thermal grease and a mounting torque of ≥ 6 in. lbs.  
© Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
April, 2006 − Rev. 8  
MJF6388/D  
 
12345678

中文翻译

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MJF6668G 替代型号

型号 品牌 替代类型 描述 数据表
MJF127G ONSEMI

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MJF127 ONSEMI

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 COMPLEMENTARY SILICON POWER DARLINGTONS 5.0 A, 100 V, 30 W
MJF6668 ONSEMI

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 COMPLEMENTARY SILICON POWER DARLINGTONS

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