Datasheet > MJH11017_06

MJH11017_06

更新时间： 2024-02-22 01:13:32

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
6页	86K
描述
15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150−250 VOLTS, 150 WATTS

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中文翻译

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数据手册

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MJH11017_06 数据手册

MJH11017, MJH11019,

MJH11021ꢀ(PNP)

MJH11018, MJH11020,

MJH11022ꢀ(NPN)

Preferred Device

Complementary Darlington

Silicon Power Transistors

http://onsemi.com

These devices are designed for use as general purpose amplifiers,

low frequency switching and motor control applications.

15 AMPERE DARLINGTON

COMPLEMENTARY SILICON

POWER TRANSISTORS

Features

• High DC Current Gain @ 10 Adc — h = 400 Min (All Types)

150−250 VOLTS, 150 WATTS

• Collector−Emitter Sustaining Voltage

MARKING

DIAGRAM

= 150 Vdc (Min) — MJH11018, 17

CEO(sus)

= 200 Vdc (Min) — MJH11020, 19

= 250 Vdc (Min) — MJH11022, 21

• Low Collector−Emitter Saturation Voltage

CE(sat)

= 1.2 V (Typ) @ I = 5.0 A

SOT−93

(TO−218)

= 1.8 V (Typ) @ I = 10 A

AYWWG

MJH110xx

CASE 340D

STYLE 1

• Monolithic Construction

• Pb−Free Packages are Available*

MAXIMUM RATINGS

= Assembly Location

= Year

Rating

Symbol

Max

Unit

= Work Week

= Pb−Free Package

Collector−Emitter Voltage

Vdc

CEO

MJH11018, MJH11017

MJH11020, MJH11019

MJH11022, MJH11021

150

200

250

MJH110xx = Device Code

xx = 17, 19, 21, 18, 20, 22

Collector−Base Voltage

Vdc

ORDERING INFORMATION

MJH11018, MJH11017

MJH11020, MJH11019

MJH11022, MJH11021

150

200

250

Device

Package

Shipping

MJH11017

SOT−93

30 Units / Rail

Emitter−Base Voltage

5.0

Vdc

Adc

MJH11017G

SOT−93

(Pb−Free)

Collector Current − Continuous

− Peak (Note 1)

MJH11018

SOT−93

30 Units / Rail

Base Current

0.5

Adc

MJH11018G

SOT−93

(Pb−Free)

Total Device Dissipation @ T = 25_C

150

1.2

Derate above 25_C

W/_C

MJH11019

SOT−93

30 Units / Rail

Operating and Storage Junction Temperature T , T

–ꢀ65 to

+ꢀ150

stg

MJH11019G

SOT−93

(Pb−Free)

Range

THERMAL CHARACTERISTICS

MJH11020

SOT−93

30 Units / Rail

Characteristic

Symbol

Max

Unit

MJH11020G

SOT−93

(Pb−Free)

Thermal Resistance, Junction−to−Case

0.83

_C/W

MJH11021

SOT−93

30 Units / Rail

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle v 10%.

MJH11021G

SOT−93

(Pb−Free)

MJH11022

SOT−93

30 Units / Rail

MJH11022G

SOT−93

(Pb−Free)

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

July, 2006 − Rev. 6

MJH11017/D

12 3 4 5 6

中文翻译

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与MJH11017_06相关器件

型号	品牌	获取价格	描述	数据表
MJH11017G	ONSEMI	获取价格	15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150−250 VOLTS, 150 WATT
MJH11018	MOTOROLA	获取价格	15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150, 200, 250 VOLTS 150 WATTS
MJH11018	ONSEMI	获取价格	DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
MJH11018	NJSEMI	获取价格	Trans Darlington NPN 150V 15A 3-Pin(3+Tab) TO-247 Rail
MJH11018G	ONSEMI	获取价格	15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150−250 VOLTS, 150 WATT
MJH11019	MOTOROLA	获取价格	15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150, 200, 250 VOLTS 150 WATTS
MJH11019	ONSEMI	获取价格	DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
MJH11019	NJSEMI	获取价格	Trans Darlington PNP 200V 15A 3-Pin(3+Tab) SOT-93 Rail
MJH11019G	ONSEMI	获取价格	15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150−250 VOLTS, 150 WATT
MJH11020	MOTOROLA	获取价格	15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150, 200, 250 VOLTS 150 WATTS

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