Datasheet > MJH10012

MJH10012

更新时间： 2024-11-23 10:55:43

品牌	Logo	应用领域
SAVANTIC		晶体晶体管
页数	文件大小	规格书
4页	153K
描述
Silicon NPN Power Transistors

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中文翻译

获取价格

数据手册

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MJH10012 数据手册

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

MJH10012

DESCRIPTION

·With TO-3PN package

·High voltage,high current

·DARLINGTON

APPLICATIONS

·Automotive ignition

·Switching regulator

·Motor control applications

PINNING

DESCRIPTION

Base

Collector;connected to

mounting base

Fig.1 simplified outline (TO-3PN) and symbol

Emitter

Abolute maximum ratings(Ta=25ꢀ )

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

600

400

UNIT

Open base

Open collector

I_CP

Collector current-peak

Base current

I_B

P_C

Collector power dissipation

Junction temperature

Storage temperature

T_C=25ꢀ

118

150

-55~150

ꢀ

T_j

T_stg

ꢀ

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

R_{th j-C}

Thermal resistance from junction to case

0.95

ꢀ/W

12 3 4

中文翻译

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MJH11018G	ONSEMI	获取价格	15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150−250 VOLTS, 150 WATT
MJH11019	MOTOROLA	获取价格	15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150, 200, 250 VOLTS 150 WATTS