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MJF6107 PDF预览

MJF6107

更新时间: 2024-11-02 22:31:31
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管功率双极晶体管开关局域网
页数 文件大小 规格书
6页 220K
描述
PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS

MJF6107 技术参数

生命周期:Transferred零件包装代码:SFM
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknownHTS代码:8541.29.00.95
风险等级:5.46Is Samacsys:N
外壳连接:ISOLATED最大集电极电流 (IC):7 A
基于收集器的最大容量:250 pF集电极-发射极最大电压:70 V
配置:SINGLE最小直流电流增益 (hFE):5
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:PNP
功耗环境最大值:34 W最大功率耗散 (Abs):34 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):4 MHzVCEsat-Max:2 V
Base Number Matches:1

MJF6107 数据手册

 浏览型号MJF6107的Datasheet PDF文件第2页浏览型号MJF6107的Datasheet PDF文件第3页浏览型号MJF6107的Datasheet PDF文件第4页浏览型号MJF6107的Datasheet PDF文件第5页浏览型号MJF6107的Datasheet PDF文件第6页 
Order this document  
by MJF6107/D  
SEMICONDUCTOR TECHNICAL DATA  
PNP SILICON  
POWER TRANSISTOR  
7 AMPERES  
For Isolated Package Applications  
Designed for general–purpose amplifier and switching applications, where the  
mounting surface of the device is required to be electrically isolated from the heatsink  
or chassis.  
70 VOLTS  
34 WATTS  
Electrically Similar to the Popular 2N6107  
70 V  
7 A Rated Collector Current  
No Isolating Washers Required  
Reduced System Cost  
CEO(sus)  
High Current Gain–Bandwidth Product  
f
= 4 MHz (Min) Ca, I = 500 mAdc  
T
C
UL Recognized, File #E69369, to 3500 V Isolation  
RMS  
CASE 221D–02  
TO–220 TYPE  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
70  
Unit  
Vdc  
Vdc  
Vdc  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
V
CEO  
V
80  
CB  
EB  
V
5
RMS Isolation Voltage (1)  
(for 1 sec, R.H. < 30%,  
Test No. 1 Per Fig. 13  
Test No. 2 Per Fig. 14  
Test No. 3 Per Fig. 15  
V
ISOL  
4500  
3500  
1500  
V
RMS  
T
= 25 C)  
A
Collector Current — Continuous  
Peak  
I
7
10  
Adc  
Adc  
C
Base Current  
I
3
B
Total Power Dissipation* @ T = 25 C  
C
Derate above 25 C  
P
D
34  
0.27  
Watts  
W/ C  
Total Power Dissipation @ T = 25 C  
A
Derate above 25 C  
P
D
2
Watts  
W/ C  
0.016  
Operating and Storage Junction Temperature Range  
T , T  
65 to +150  
C
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
62.5  
3.7  
Unit  
C/W  
C/W  
C
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case*  
Lead Temperature for Soldering Purpose  
R
R
θJA  
θJC  
T
L
260  
* Measurement made with thermocouple contacting the bottom insulated mounting surface (in a location beneath the die), the device mounted on  
a heatsink with thermal grease and a mounting torque of 6 in. lbs.  
(1) Proper strike and creepage distance must be provided.  
REV 1  
Motorola, Inc. 1995

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