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MJF44H11G PDF预览

MJF44H11G

更新时间： 2024-01-19 01:57:37
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管开关PC局域网
页数 文件大小 规格书
5页 116K
描述
SILICON POWER TRANSISTORS 10 AMPERES 80 VOLTS, 36 WATTS

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中文翻译

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MJF44H11G 技术参数

是否无铅： 不含铅生命周期：Active
零件包装代码：TO-220AB包装说明：LEAD FREE, CASE 221D-03, ISOLATED TO-220, FULL PACK-3
针数：3Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.29.00.75
Factory Lead Time：1 week风险等级：0.86
Samacsys Confidence：3Samacsys Status：Released
Samacsys PartID：225722Samacsys Pin Count：3
Samacsys Part Category：Transistor BJT NPNSamacsys Package Category：Transistor Outline, Vertical
Samacsys Footprint Name：TO-220 FULLPAK CASE 221D-03Samacsys Released Date：2017-08-14 18:28:58
Is Samacsys：N外壳连接：ISOLATED
最大集电极电流 (IC)：10 A集电极-发射极最大电压：80 V
配置：SINGLE最小直流电流增益 (hFE)：40
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
JESD-609代码：e3元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：260
极性/信道类型：NPN最大功率耗散 (Abs)：35 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：NO端子面层：Tin (Sn)
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：40晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：50 MHz
Base Number Matches：1

MJF44H11G 数据手册

 浏览型号MJF44H11G的Datasheet PDF文件第2页浏览型号MJF44H11G的Datasheet PDF文件第3页浏览型号MJF44H11G的Datasheet PDF文件第4页浏览型号MJF44H11G的Datasheet PDF文件第5页 
MJF44H11 (NPN),  
MJF45H11 (PNP)  
Preferred Devices  
Complementary  
Power Transistors  
For Isolated Package Applications  
http://onsemi.com  
Complementary power transistors are for general purpose power  
amplification and switching such as output or driver stages in  
applications such as switching regulators, converters and power  
amplifiers.  
SILICON POWER TRANSISTORS  
10 AMPERES  
80 VOLTS, 36 WATTS  
Features  
• Low Collector−Emitter Saturation Voltage −  
V
CE(sat)  
= 1.0 V (Max) @ 8.0 A  
• Fast Switching Speeds  
• Complementary Pairs Simplifies Designs  
• Pb−Free Packages are Available*  
ISOLATED TO−220  
CASE 221D  
STYLE 2  
1
MAXIMUM RATINGS  
2
3
Rating  
Collector−Emitter Voltage  
Emitter−Base Voltage  
Symbol  
Value  
80  
Unit  
Vdc  
Vdc  
Adc  
V
CEO  
MARKING DIAGRAM  
V
EB  
5
Collector Current − Continuous  
− Peak  
I
C
10  
20  
Total Power Dissipation  
P
D
@ T = 25°C  
C
36  
1.67  
W
W/°C  
F4xH11G  
AYWW  
Derate above 25°C  
Total Power Dissipation  
P
D
@ T = 25°C  
A
2.0  
0.016  
W
W/°C  
Derate above 25°C  
Operating and Storage Junction  
Temperature Range  
T , T  
−55 to 150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
F4xH11 = Specific Device Code  
x = 4 or 5  
Symbol  
Max  
3.5  
Unit  
°C/W  
°C/W  
G
A
Y
= Pb−Free Package  
= Assembly Location  
= Year  
Thermal Resistance, Junction−to−Case  
Thermal Resistance, Junction−to−Ambient  
R
q
JC  
R
62.5  
q
JA  
WW  
= Work Week  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
ORDERING INFORMATION  
Device  
Package  
Shipping  
MJF44H11  
TO−220 FULLPACK 50 Units/Rail  
MJF44H11G TO−220 FULLPACK 50 Units/Rail  
(Pb−Free)  
MJF45H11  
TO−220 FULLPACK 50 Units/Rail  
MJF45H11G TO−220 FULLPACK 50 Units/Rail  
(Pb−Free)  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
© Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
April, 2006 − Rev. 4  
MJF44H11/D  
12345

中文翻译

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MJF44H11G 替代型号

型号 品牌 替代类型 描述 数据表
MJF44H11 ONSEMI

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