Datasheet > MJF45H11

MJF45H11

更新时间： 2024-11-03 12:49:43

品牌	Logo	应用领域
SAVANTIC		晶体晶体管
页数	文件大小	规格书
3页	205K
描述
Silicon PNP Power Transistors

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中文翻译

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MJF45H11 数据手册

SavantIC Semiconductor

Product Specification

Silicon PNP Power Transistors

MJF45H11

DESCRIPTION

·With TO-220F package

·Fast switching speeds

·Low collector saturation voltage

·Complement to type MJF44H11

APPLICATIONS

·For general purpose power amplification

and switching regulators,converters and

power amplifiers applications

PINNING

DESCRIPTION

Base

Collector

Emitter

Fig.1 simplified outline (TO-220F) and symbol

ABSOLUTE MAXIMUM RATINGS(Tc=25ꢀ )

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

CONDITIONS

Open emitter

VALUE

-80

UNIT

Open base

-80

Open collector

-5

Collector current (DC)

Collector current-Peak

-10

I_CM

-20

T_C=25ꢀ

T_a=25ꢀ

P_D

Total power dissipation

2.0

Junction temperature

Storage temperature

150

-55~150

ꢀ

T_j

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Thermal resistance from junction to case

Thermal resistance from junction to ambient

VALUE

3.5

UNIT

ꢀ/W

R_{th j-C}

R_{th j-A}

62.5

12 3

中文翻译

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