MJF31CG

更新时间： 2024-11-19 10:55:43

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
5页	123K
描述
Complementary Silicon Plastic Power Transistors

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中文翻译

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数据手册
替代型号

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MJF31CG 数据手册

MJF31C (NPN),

MJF32C (PNP)

Preferred Device

Complementary Silicon

Plastic Power Transistors

for Isolated Package

Applications

http://onsemi.com

3.0 AMPERE

Designed for use in general purpose amplifier and switching

applications.

POWER TRANSISTORS

COMPLEMENTARY SILICON

100 VOLTS, 28 WATTS

Features

• Collector−Emitter Saturation Voltage −

CE(sat)

= 1.2 Vdc (Max) @ I = 3.0 Adc

• Collector−Emitter Sustaining Voltage −

= 100 Vdc (Min)

CEO(sus)

TO−220 FULLPAK

CASE 221D

• High Current Gain − Bandwidth Product

f = 3.0 MHz (Min) @ I = 500 mAdc

STYLE 2

• UL Recognized, File #E69369, to 3500 V

• Pb−Free Packages are Available*

Isolation

RMS

MAXIMUM RATINGS

Rating

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Symbol

Value

100

5.0

Unit

Vdc

Adc

MARKING DIAGRAM

CEO

Collector CurrentUnclamped Inductive

Load Energy (Note 1)

− Continuous

3.0

5.0

MJF3xCG

AYWW

− Peak

Base Current

1.0

Adc

Total Power Dissipation @ T = 25_C

0.22

W/_C

Derate above 25_C

Total Power Dissipation @ T = 25_C

2.0

0.016

Derate above 25_C

W/_C

= 1 or 2

= Pb−Free Package

= Assembly Location

= Year

Unclamped Inductive Load Energy (Note 1)

Operating and Storage Junction

Temperature Range

T , T

–65 to +150

stg

WW = Work Week

THERMAL CHARACTERISTICS

Characteristic

ORDERING INFORMATION

Symbol

Max

62.5

4.46

Unit

°C/W

Device

MJF31C

MJF31CG

Package

Shipping

Thermal Resistance, Junction−to−Ambient

Thermal Resistance, Junction−to−Case

TO−220 FULLPAK

50 Units/Rail

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

TO−220 FULLPAK

(Pb−Free)

MJF32C

TO−220 FULLPAK

50 Units/Rail

MJF32CG

TO−220 FULLPAK

(Pb−Free)

1. I = 1.8 A, L = 20 mH, P.R.F. = 10 Hz, V = 10 V, R = 100 W.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2008

Publication Order Number:

July, 2008 − Rev. 5

MJF31C/D

12 3 4 5

中文翻译

下载PDF

MJF31CG 替代型号

型号	品牌	替代类型	描述	数据表
MJF31C	ONSEMI	完全替代	3.0 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS 28 WATTS

与MJF31CG相关器件

型号	品牌	获取价格	描述	数据表
MJF32C	ONSEMI	获取价格	3.0 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS 28 WATTS
MJF32C	MOTOROLA	获取价格	Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
MJF32CG	ONSEMI	获取价格	Complementary Silicon Plastic Power Transistors
MJF4343	ONSEMI	获取价格	POWER TRANSISTORS COMPLEMENTARY SILICON
MJF44H11	ONSEMI	获取价格	Complementary Power Transistors
MJF44H11	ISC	获取价格	isc Silicon NPN Power Transistors
MJF44H11	SAVANTIC	获取价格	Silicon NPN Power Transistors
MJF44H11	MOTOROLA	获取价格	10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220, TO-220, 3 PIN
MJF44H11	NJSEMI	获取价格	Trans GP BJT NPN 80V 10A 3-Pin(3+Tab) TO-220 Full-Pak Rail
MJF44H11_06	ONSEMI	获取价格	SILICON POWER TRANSISTORS 10 AMPERES 80 VOLTS, 36 WATTS

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