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MJF31CG PDF预览

MJF31CG

更新时间： 2024-11-03 10:55:43
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
5页 123K
描述
Complementary Silicon Plastic Power Transistors

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中文翻译

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MJF31CG 数据手册

 浏览型号MJF31CG的Datasheet PDF文件第2页浏览型号MJF31CG的Datasheet PDF文件第3页浏览型号MJF31CG的Datasheet PDF文件第4页浏览型号MJF31CG的Datasheet PDF文件第5页 
MJF31C (NPN),  
MJF32C (PNP)  
Preferred Device  
Complementary Silicon  
Plastic Power Transistors  
for Isolated Package  
Applications  
http://onsemi.com  
3.0 AMPERE  
Designed for use in general purpose amplifier and switching  
applications.  
POWER TRANSISTORS  
COMPLEMENTARY SILICON  
100 VOLTS, 28 WATTS  
Features  
• Collector−Emitter Saturation Voltage −  
V
CE(sat)  
= 1.2 Vdc (Max) @ I = 3.0 Adc  
C
4
• Collector−Emitter Sustaining Voltage −  
= 100 Vdc (Min)  
V
CEO(sus)  
TO−220 FULLPAK  
CASE 221D  
• High Current Gain − Bandwidth Product  
f = 3.0 MHz (Min) @ I = 500 mAdc  
T
C
STYLE 2  
• UL Recognized, File #E69369, to 3500 V  
• Pb−Free Packages are Available*  
Isolation  
RMS  
1
2
3
MAXIMUM RATINGS  
Rating  
Collector−Emitter Voltage  
Collector−Base Voltage  
Emitter−Base Voltage  
Symbol  
Value  
100  
100  
5.0  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
MARKING DIAGRAM  
V
CEO  
V
CB  
EB  
V
Collector CurrentUnclamped Inductive  
Load Energy (Note 1)  
− Continuous  
I
C
3.0  
5.0  
MJF3xCG  
AYWW  
− Peak  
Base Current  
I
B
1.0  
Adc  
Total Power Dissipation @ T = 25_C  
P
28  
W
C
D
0.22  
W/_C  
Derate above 25_C  
Total Power Dissipation @ T = 25_C  
P
D
2.0  
0.016  
W
A
Derate above 25_C  
W/_C  
x
= 1 or 2  
G
A
Y
= Pb−Free Package  
= Assembly Location  
= Year  
Unclamped Inductive Load Energy (Note 1)  
E
32  
mJ  
Operating and Storage Junction  
Temperature Range  
T , T  
–65 to +150  
_C  
J
stg  
WW = Work Week  
THERMAL CHARACTERISTICS  
Characteristic  
ORDERING INFORMATION  
Symbol  
Max  
62.5  
4.46  
Unit  
°C/W  
°C/W  
Device  
MJF31C  
MJF31CG  
Package  
Shipping  
Thermal Resistance, Junction−to−Ambient  
Thermal Resistance, Junction−to−Case  
R
q
JC  
TO−220 FULLPAK  
50 Units/Rail  
50 Units/Rail  
R
q
JC  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
TO−220 FULLPAK  
(Pb−Free)  
MJF32C  
TO−220 FULLPAK  
50 Units/Rail  
50 Units/Rail  
MJF32CG  
TO−220 FULLPAK  
(Pb−Free)  
1. I = 1.8 A, L = 20 mH, P.R.F. = 10 Hz, V = 10 V, R = 100 W.  
C
CC  
BE  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2008  
1
Publication Order Number:  
July, 2008 − Rev. 5  
MJF31C/D  
 
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MJF31CG 替代型号

型号 品牌 替代类型 描述 数据表
MJF31C ONSEMI

完全替代

 3.0 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS 28 WATTS

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