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MJF32C PDF预览

MJF32C

更新时间: 2024-11-02 22:30:07
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管开关局域网
页数 文件大小 规格书
8页 94K
描述
3.0 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS 28 WATTS

MJF32C 技术参数

是否无铅: 含铅生命周期:Obsolete
零件包装代码:TO-220AB包装说明:PLASTIC, CASE 221D-03, TO-220, FULL PACK-3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
Factory Lead Time:1 week风险等级:5.29
其他特性:UL RECOGNIZED外壳连接:ISOLATED
最大集电极电流 (IC):3 A集电极-发射极最大电压:100 V
配置:SINGLE最小直流电流增益 (hFE):10
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):240
极性/信道类型:PNP最大功率耗散 (Abs):28 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):3 MHz
Base Number Matches:1

MJF32C 数据手册

 浏览型号MJF32C的Datasheet PDF文件第2页浏览型号MJF32C的Datasheet PDF文件第3页浏览型号MJF32C的Datasheet PDF文件第4页浏览型号MJF32C的Datasheet PDF文件第5页浏览型号MJF32C的Datasheet PDF文件第6页浏览型号MJF32C的Datasheet PDF文件第7页 
MJF31C* (NPN),  
MJF32C* (PNP)  
*Preferred Devices  
Complementary Silicon  
Plastic Power Transistors  
for Isolated Package  
Applications  
http://onsemi.com  
Designed for use in general purpose amplifier and switching  
applications.  
3.0 AMPERE  
POWER TRANSISTORS  
COMPLEMENTARY  
SILICON  
Collector–Emitter Saturation Voltage –  
V
= 1.2 Vdc (Max) @ I = 3.0 Adc  
CE(sat)  
Collector–Emitter Sustaining Voltage –  
= 100 Vdc (Min)  
C
100 VOLTS  
28 WATTS  
V
CEO(sus)  
High Current Gain – Bandwidth Product  
f = 3.0 MHz (Min) @ I = 500 mAdc  
T
C
4
UL Recognized, File #E69369, to 3500 V  
Isolation  
RMS  
MAXIMUM RATINGS  
MJF3xC  
YWW  
MJF31C  
MJF32C  
Rating  
Symbol  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
STYLE 1:  
PIN 1. BASE  
2. COLLECTOR  
3. EMITTER  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
V
CEO  
100  
100  
5.0  
1
2
V
4. COLLECTOR  
CB  
EB  
3
V
TO–220 FULLPAK  
CASE 221D–02  
Collector Current  
Continuous  
Peak  
I
C
3.0  
5.0  
MJF3xC = Specific Device Code  
Base Current  
I
B
1.0  
Adc  
x
= 1 or 2  
Y
WW  
= Year  
= Work Week  
Total Power Dissipation  
P
D
@ T = 25_C  
28  
0.22  
Watts  
W/_C  
C
Derate above 25_C  
Total Power Dissipation  
P
D
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 6 of this data sheet.  
@ T = 25_C  
2.0  
0.016  
Watts  
A
Derate above 25_C  
W/_C  
mJ  
Unclamped Inductive  
Load Energy (Note 1)  
E
32  
Preferred devices are recommended choices for future use  
and best overall value.  
Operating and Storage Junction  
Temperature Range  
T , T  
J stg  
–65 to  
+150  
_C  
1. I = 1.8 A, L = 20 mH, P.R.F. = 10 Hz, V  
C
= 10 V, R = 100 ..  
BE  
CC  
Semiconductor Components Industries, LLC, 2002  
1
Publication Order Number:  
APRIL, 2002 – Rev. 2  
MJF31C/D  

MJF32C 替代型号

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