5秒后页面跳转
捷配首页

Datasheet > MJF32CG
MJF32CG PDF预览

MJF32CG

更新时间： 2024-11-03 10:55:43
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管开关局域网
页数 文件大小 规格书
5页 123K
描述
Complementary Silicon Plastic Power Transistors

阅读下载

中文翻译

获取价格

MJF32CG 技术参数

是否无铅： 不含铅生命周期：Active
零件包装代码：TO-220AB包装说明：LEAD FREE, PLASTIC, CASE 221D-03, TO-220, FULL PACK-3
针数：3Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：1 week风险等级：0.89
其他特性：UL RECOGNIZED外壳连接：ISOLATED
最大集电极电流 (IC)：3 A集电极-发射极最大电压：100 V
配置：SINGLE最小直流电流增益 (hFE)：10
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
JESD-609代码：e3元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：260
极性/信道类型：PNP最大功率耗散 (Abs)：28 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：NO端子面层：Tin (Sn)
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：40晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：3 MHz
Base Number Matches：1

MJF32CG 数据手册

 浏览型号MJF32CG的Datasheet PDF文件第2页浏览型号MJF32CG的Datasheet PDF文件第3页浏览型号MJF32CG的Datasheet PDF文件第4页浏览型号MJF32CG的Datasheet PDF文件第5页 
MJF31C (NPN),  
MJF32C (PNP)  
Preferred Device  
Complementary Silicon  
Plastic Power Transistors  
for Isolated Package  
Applications  
http://onsemi.com  
3.0 AMPERE  
Designed for use in general purpose amplifier and switching  
applications.  
POWER TRANSISTORS  
COMPLEMENTARY SILICON  
100 VOLTS, 28 WATTS  
Features  
• Collector−Emitter Saturation Voltage −  
V
CE(sat)  
= 1.2 Vdc (Max) @ I = 3.0 Adc  
C
4
• Collector−Emitter Sustaining Voltage −  
= 100 Vdc (Min)  
V
CEO(sus)  
TO−220 FULLPAK  
CASE 221D  
• High Current Gain − Bandwidth Product  
f = 3.0 MHz (Min) @ I = 500 mAdc  
T
C
STYLE 2  
• UL Recognized, File #E69369, to 3500 V  
• Pb−Free Packages are Available*  
Isolation  
RMS  
1
2
3
MAXIMUM RATINGS  
Rating  
Collector−Emitter Voltage  
Collector−Base Voltage  
Emitter−Base Voltage  
Symbol  
Value  
100  
100  
5.0  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
MARKING DIAGRAM  
V
CEO  
V
CB  
EB  
V
Collector CurrentUnclamped Inductive  
Load Energy (Note 1)  
− Continuous  
I
C
3.0  
5.0  
MJF3xCG  
AYWW  
− Peak  
Base Current  
I
B
1.0  
Adc  
Total Power Dissipation @ T = 25_C  
P
28  
W
C
D
0.22  
W/_C  
Derate above 25_C  
Total Power Dissipation @ T = 25_C  
P
D
2.0  
0.016  
W
A
Derate above 25_C  
W/_C  
x
= 1 or 2  
G
A
Y
= Pb−Free Package  
= Assembly Location  
= Year  
Unclamped Inductive Load Energy (Note 1)  
E
32  
mJ  
Operating and Storage Junction  
Temperature Range  
T , T  
–65 to +150  
_C  
J
stg  
WW = Work Week  
THERMAL CHARACTERISTICS  
Characteristic  
ORDERING INFORMATION  
Symbol  
Max  
62.5  
4.46  
Unit  
°C/W  
°C/W  
Device  
MJF31C  
MJF31CG  
Package  
Shipping  
Thermal Resistance, Junction−to−Ambient  
Thermal Resistance, Junction−to−Case  
R
q
JC  
TO−220 FULLPAK  
50 Units/Rail  
50 Units/Rail  
R
q
JC  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
TO−220 FULLPAK  
(Pb−Free)  
MJF32C  
TO−220 FULLPAK  
50 Units/Rail  
50 Units/Rail  
MJF32CG  
TO−220 FULLPAK  
(Pb−Free)  
1. I = 1.8 A, L = 20 mH, P.R.F. = 10 Hz, V = 10 V, R = 100 W.  
C
CC  
BE  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2008  
1
Publication Order Number:  
July, 2008 − Rev. 5  
MJF31C/D  
 
12345

中文翻译

下载PDF

MJF32CG 替代型号

型号 品牌 替代类型 描述 数据表
MJF32C ONSEMI

类似代替

 3.0 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS 28 WATTS
BD245C-S BOURNS

功能相似

 Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
BD746A-S BOURNS

功能相似

 Power Bipolar Transistor, 20A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,

与MJF32CG相关器件

型号 品牌 获取价格 描述 数据表
MJF4343 ONSEMI

获取价格

 		POWER TRANSISTORS COMPLEMENTARY SILICON
MJF44H11 ONSEMI

获取价格

 		Complementary Power Transistors
MJF44H11 ISC

获取价格

 		isc Silicon NPN Power Transistors
MJF44H11 SAVANTIC

获取价格

 		Silicon NPN Power Transistors
MJF44H11 MOTOROLA

获取价格

 		10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220, TO-220, 3 PIN
MJF44H11 NJSEMI

获取价格

 		Trans GP BJT NPN 80V 10A 3-Pin(3+Tab) TO-220 Full-Pak Rail
MJF44H11_06 ONSEMI

获取价格

 		SILICON POWER TRANSISTORS 10 AMPERES 80 VOLTS, 36 WATTS
MJF44H11_09 ONSEMI

获取价格

 		Complementary Power Transistors
MJF44H11G ONSEMI

获取价格

 		SILICON POWER TRANSISTORS 10 AMPERES 80 VOLTS, 36 WATTS
MJF45H11 ISC

获取价格

 		isc Silicon PNP Power Transistors

与MJF32CG相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证