Datasheet > MJF4343

MJF4343

更新时间： 2024-11-02 22:30:07

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
6页	146K
描述
POWER TRANSISTORS COMPLEMENTARY SILICON

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MJF4343 数据手册

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by MJE4343/D

SEMICONDUCTOR TECHNICAL DATA

. . . designed for use in high power audio amplifier applications and high voltage

switching regulator circuits.

16 AMPERE

POWER TRANSISTORS

COMPLEMENTARY

SILICON

•

High Collector–Emitter Sustaining Voltage —

NPN

PNP

= 160 Vdc — MJE4343 MJE4353

CEO(sus)

•

High DC Current Gain — @ I = 8.0 Adc

160 VOLTS

= 35 (Typ)

Low Collector–Emitter Saturation Voltage —

= 2.0 Vdc (Max) @ I = 8.0 Adc

CE(sat)

MAXIMUM RATINGS

Rating

Symbol

Max

160

7.0

Unit

Vdc

Adc

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

CEO

Collector Current — Continuous

Peak (1)

CASE 340D–02

TO–218 TYPE

Base Current — Continuous

5.0

125

Adc

Watts

Total Power Dissipation @ T = 25 C

Operating and Storage Junction

Temperature Range

T , T

–65 to +150

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

θJC

10%.

1.0

C/W

(1) Pulse Test: Pulse Width

5.0 µs, Duty Cycle

3.5

3.0

2.5

2.0

1.5

1.0

0.5

100

125

150

T , AMBIENT TEMPERATURE (

Figure 1. Power Derating

Reference: Ambient Temperature

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁸r Power Transistor Device Data

12 3 4 5 6

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