MJF44H11

更新时间： 2024-11-03 10:55:43

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	74K
描述
isc Silicon NPN Power Transistors

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技术参数
数据手册

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MJF44H11 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.56
Base Number Matches：	1

MJF44H11 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistors

MJF44H11

DESCRIPTION

·Low Collector Saturation Voltage-

: V_CE(sat)= 1.0V(Max.)@ I_C= 8A

·Fast Switching Speeds

·Complement to Type MJF45H11

APPLICATIONS

·Designed for general purpose power amplification and

switching such as output or driver stages in applications

such as switching regulators,converters and power amplifier.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CEO

V_EBO

I_C

PARAMETER

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

UNIT

Collector Current-Continuous

Collector Current-Peak

I_CM

Collector Power Dissipation

@T_C=25℃

P_C

Collector Power Dissipation

@T_a=25℃

T_j

Junction Temperature

150

-55~150

℃

Storage Temperature Range

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX UNIT

3.5

℃/W

Thermal Resistance, Junction to Case

R_{th j-c}

Thermal Resistance,Junction to Ambient 62.5 ℃/W

R_{th j-a}

isc Website：www.iscsemi.cn

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