MJF44H11 (NPN),
MJF45H11 (PNP)
Preferred Devices
Complementary
Power Transistors
For Isolated Package Applications
http://onsemi.com
Complementary power transistors are for general purpose power
amplification and switching such as output or driver stages in
applications such as switching regulators, converters and power
amplifiers.
SILICON POWER TRANSISTORS
10 AMPERES
80 VOLTS, 36 WATTS
Features
• Low Collector−Emitter Saturation Voltage −
V
CE(sat)
= 1.0 V (Max) @ 8.0 A
• Fast Switching Speeds
• Complementary Pairs Simplifies Designs
• Pb−Free Packages are Available*
ISOLATED TO−220
CASE 221D
STYLE 2
1
MAXIMUM RATINGS
2
3
Rating
Collector−Emitter Voltage
Emitter−Base Voltage
Symbol
Value
80
Unit
Vdc
Vdc
Adc
V
CEO
MARKING DIAGRAM
V
EB
5
Collector Current − Continuous
− Peak
I
C
10
20
Total Power Dissipation
P
D
@ T = 25°C
C
36
0.288
W
W/°C
F4xH11G
AYWW
Derate above 25°C
Total Power Dissipation
P
D
@ T = 25°C
A
2.0
0.016
W
W/°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
T , T
−55 to 150
°C
J
stg
THERMAL CHARACTERISTICS
Characteristic
F4xH11 = Specific Device Code
x = 4 or 5
Symbol
Max
3.5
Unit
°C/W
°C/W
G
A
Y
= Pb−Free Package
= Assembly Location
= Year
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
R
q
JC
R
62.5
q
JA
WW
= Work Week
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
ORDERING INFORMATION
Device
Package
Shipping
MJF44H11
TO−220 FULLPACK 50 Units/Rail
MJF44H11G TO−220 FULLPACK 50 Units/Rail
(Pb−Free)
MJF45H11
TO−220 FULLPACK 50 Units/Rail
MJF45H11G TO−220 FULLPACK 50 Units/Rail
(Pb−Free)
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2009
1
Publication Order Number:
April, 2009 − Rev. 6
MJF44H11/D