5秒后页面跳转
MJF18206 PDF预览

MJF18206

更新时间: 2024-11-02 22:30:07
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管
页数 文件大小 规格书
12页 506K
描述
POWER TRANSISTORS

MJF18206 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:SFM
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.46Is Samacsys:N
外壳连接:ISOLATED最大集电极电流 (IC):8 A
集电极-发射极最大电压:600 V配置:SINGLE
最小直流电流增益 (hFE):5JESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):225
极性/信道类型:NPN最大功率耗散 (Abs):40 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):13 MHz
Base Number Matches:1

MJF18206 数据手册

 浏览型号MJF18206的Datasheet PDF文件第2页浏览型号MJF18206的Datasheet PDF文件第3页浏览型号MJF18206的Datasheet PDF文件第4页浏览型号MJF18206的Datasheet PDF文件第5页浏览型号MJF18206的Datasheet PDF文件第6页浏览型号MJF18206的Datasheet PDF文件第7页 
Order this document  
by MJE18206/D  
SEMICONDUCTOR TECHNICAL DATA  
POWER TRANSISTORS  
8 AMPERES  
1200 VOLTS  
40 and 100 WATTS  
The MJE/MJF18206 have an application specific state–of–the–art die dedicated to  
the electronic ballast (“light ballast”) and power supply applications.  
Improved Global Efficiency Due to Low Base Drive Requirements:  
— High and Flat DC Current Gain h  
— Fast Switching  
FE  
— No Coil Required in Base Circuit for fast Turn–Off (No Current Tail)  
Full Characterization at 125 C  
Motorola “6 SIGMA” Philosophy Provides Tight and Reproducible Parametric  
Distributions  
Two Package Choices: Standard TO–220 or Isolated TO–220  
MAXIMUM RATINGS  
Rating  
Symbol MJE18206 MJF18206  
Unit  
Vdc  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Emitter Voltage  
Collector–Base Voltage  
Collector–Emitter Voltage  
Emitter–Base Voltage  
V
V
600  
1200  
1200  
10  
CEO  
CBO  
V
V
CES  
EBO  
Collector Current — Continuous  
— Peak (1)  
I
8
16  
CASE 221A–06  
TO–220AB  
C
I
CM  
Base Current — Continuous  
— Peak (1)  
I
5
9
Adc  
B
I
BM  
RMS Isolation Voltage (2)  
(for 1 sec, R.H. 30%)  
Per Figure 22  
Per Figure 23  
Per Figure 24  
V
V
V
4500  
3500  
1500  
Volts  
ISOL1  
ISOL2  
ISOL3  
T
C
= 25°C  
*Total Device Dissipation @ T = 25°C  
*Derate above 25 C  
P
D
100  
0.8  
40  
0.32  
Watt  
W/ C  
C
Operating and Storage Temperature  
T , T  
J stg  
65 to 150  
C
THERMAL CHARACTERISTICS  
Rating  
Symbol MJE18206 MJF18206  
Unit  
Thermal Resistance — Junction to Case  
— Junction to Ambient  
R
θJC  
R
θJA  
1.25  
62.5  
3.125  
62.5  
C/W  
CASE 221D–02  
Maximum Lead Temperature for Soldering  
Purposes: 1/8from Case for 5 Seconds  
T
L
260  
C
TO–220 FULLPACK  
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle  
10%.  
(2) Proper strike and creepage distance must be provided.  
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit  
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.  
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.  
Motorola, Inc. 1995

与MJF18206相关器件

型号 品牌 获取价格 描述 数据表
MJF2955 ONSEMI

获取价格

COMPLEMENTARY SILICON POWER TRANSISTORS
MJF2955 MOTOROLA

获取价格

COMPLEMENTARY SILICON POWER TRANSISTORS 10 AMPERES 90 VOLTS 30 WATTS
MJF2955G ONSEMI

获取价格

Complementary Silicon Power Transistors
MJF3055 MOTOROLA

获取价格

COMPLEMENTARY SILICON POWER TRANSISTORS 10 AMPERES 90 VOLTS 30 WATTS
MJF3055 ONSEMI

获取价格

COMPLEMENTARY SILICON POWER TRANSISTORS
MJF3055_08 ONSEMI

获取价格

Complementary Silicon Power Transistors
MJF3055G ONSEMI

获取价格

Complementary Silicon Power Transistors
MJF31C ONSEMI

获取价格

3.0 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS 28 WATTS
MJF31C MOTOROLA

获取价格

3A, 100V, NPN, Si, POWER TRANSISTOR, TO-220, TO-220, 3 PIN
MJF31C_08 ONSEMI

获取价格

Complementary Silicon Plastic Power Transistors