5秒后页面跳转
MJF3055 PDF预览

MJF3055

更新时间: 2024-11-02 22:30:07
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管功率双极晶体管开关局域网
页数 文件大小 规格书
4页 159K
描述
COMPLEMENTARY SILICON POWER TRANSISTORS 10 AMPERES 90 VOLTS 30 WATTS

MJF3055 技术参数

生命周期:Transferred零件包装代码:SFM
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknownHTS代码:8541.29.00.95
风险等级:5.3Is Samacsys:N
外壳连接:ISOLATED最大集电极电流 (IC):10 A
集电极-发射极最大电压:90 V配置:SINGLE
最小直流电流增益 (hFE):5JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:NPN功耗环境最大值:30 W
最大功率耗散 (Abs):30 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):2 MHz
VCEsat-Max:2.5 VBase Number Matches:1

MJF3055 数据手册

 浏览型号MJF3055的Datasheet PDF文件第2页浏览型号MJF3055的Datasheet PDF文件第3页浏览型号MJF3055的Datasheet PDF文件第4页 
Order this document  
by MJF3055/D  
SEMICONDUCTOR TECHNICAL DATA  
. . . specifically designed for general purpose amplifier and switching applications.  
Isolated Overmold Package (1500 Volts RMS Min)  
Electrically Similar to the Popular MJE3055T and MJE2955T  
COMPLEMENTARY  
SILICON  
POWER TRANSISTORS  
10 AMPERES  
90 VOLTS  
Collector–Emitter Sustaining Voltage — V  
10 Amperes Rated Collector Current  
No Isolating Washers Required  
Reduced System Cost  
90 Volts  
CEO(sus)  
30 WATTS  
UL Recognized, File #E69369, to 3500 V  
Isolation  
RMS  
CASE 221D–02  
TO–220 TYPE  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
90  
90  
5
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
Collector–Emitter Sustaining Voltage  
Collector–Emitter Breakdown Voltage  
Base–Emitter Voltage  
V
CEO(sus)  
V
CES  
EBO  
V
Collector Current — Continuous  
Base Current — Continuous  
I
C
10  
6
I
B
RMS Isolation Voltage (3)  
(for 1 sec, R.H. < 30%,  
Test No. 1 Per Fig. 4  
Test No. 2 Per Fig. 5  
Test No. 3 Per Fig. 6  
V
ISOL  
4500  
3500  
1500  
V
RMS  
T
= 25 C)  
A
Total Power Dissipation @ T = 25 C (2)  
C
P
P
30  
0.25  
Watts  
W/ C  
D
Derate above 25 C  
Total Power Dissipation @ T = 25 C  
A
Derate above 25 C  
2
Watts  
W/ C  
D
0.016  
Operating and Storage Temperature Range  
T , T  
55 to +150  
C
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
4
Unit  
C/W  
C/W  
C
Thermal Resistance — Junction to Case (2)  
Thermal Resistance — Junction to Ambient  
Lead Temperature for Soldering Purposes  
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle  
R
R
θJC  
62.5  
260  
θJA  
T
L
10%.  
(2) Measurement made with thermocouple contacting the bottom insulated surface (in a location beneath the die), the devices mounted on a  
(2) heatsink with thermal grease and a mounting torque of 6 in. lbs.  
(3) Proper strike and creepage distance must be provided.  
Motorola, Inc. 1995

与MJF3055相关器件

型号 品牌 获取价格 描述 数据表
MJF3055_08 ONSEMI

获取价格

Complementary Silicon Power Transistors
MJF3055G ONSEMI

获取价格

Complementary Silicon Power Transistors
MJF31C ONSEMI

获取价格

3.0 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS 28 WATTS
MJF31C MOTOROLA

获取价格

3A, 100V, NPN, Si, POWER TRANSISTOR, TO-220, TO-220, 3 PIN
MJF31C_08 ONSEMI

获取价格

Complementary Silicon Plastic Power Transistors
MJF31CG ONSEMI

获取价格

Complementary Silicon Plastic Power Transistors
MJF32C ONSEMI

获取价格

3.0 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS 28 WATTS
MJF32C MOTOROLA

获取价格

Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
MJF32CG ONSEMI

获取价格

Complementary Silicon Plastic Power Transistors
MJF4343 ONSEMI

获取价格

POWER TRANSISTORS COMPLEMENTARY SILICON