5秒后页面跳转
捷配首页

Datasheet > MJF3055_08
MJF3055_08 PDF预览

MJF3055_08

更新时间： 2024-11-19 10:55:43
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
5页 116K
描述
Complementary Silicon Power Transistors

阅读下载

中文翻译

获取价格

MJF3055_08 数据手册

 浏览型号MJF3055_08的Datasheet PDF文件第2页浏览型号MJF3055_08的Datasheet PDF文件第3页浏览型号MJF3055_08的Datasheet PDF文件第4页浏览型号MJF3055_08的Datasheet PDF文件第5页 
MJF3055 (NPN),  
MJF2955 (PNP)  
Complementary  
Silicon Power Transistors  
Specifically designed for general purpose amplifier and switching  
applications.  
http://onsemi.com  
Features  
COMPLEMENTARY SILICON  
POWER TRANSISTORS  
10 AMPERES  
• Isolated Overmold Package (1500 Volts RMS Min)  
• Electrically Similar to the Popular MJE3055T and MJE2955T  
• Collector−Emitter Sustaining Voltage − V  
• 10 Amperes Rated Collector Current  
• No Isolating Washers Required  
90 Volts  
CEO(sus)  
90 VOLTS, 30 WATTS  
• Reduced System Cost  
• UL Recognized, File #E69369, to 3500 V  
• Epoxy Meets UL 94 V−0 at 0.125 in  
Isolation  
RMS  
• ESD Ratings: Machine Model, C; u400 V  
TO−220 FULLPACK  
CASE 221D  
Human Body Model, 3B; u8000 V  
• Pb−Free Packages are Available*  
STYLE 2  
MAXIMUM RATINGS  
1
2
3
Rating  
Symbol  
Value  
90  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
Collector−Emitter Sustaining Voltage  
Collector−Emitter Breakdown Voltage  
Base−Emitter Voltage  
V
CEO(sus)  
MARKING DIAGRAM  
V
90  
CES  
EBO  
V
5.0  
10  
Collector Current − Continuous  
Base Current − Continuous  
I
C
I
B
6.0  
RMS Isolation Voltage (Note 3)  
V
ISOL  
V
RMS  
Fxx55G  
AYWW  
(t = 0.3 sec, R.H. ≤ 30%, T = 25_C)  
4500  
A
Per Figure 5  
Total Power Dissipation @ T = 25_C (Note 2)  
P
P
30  
W
C
D
0.25  
W/_C  
Derate above 25_C  
Total Power Dissipation @ T = 25_C  
2.0  
W
A
D
0.016 W/_C  
Derate above 25_C  
Operating and Storage Temperature Range  
T , T  
J
–55 to  
+150  
_C  
stg  
Fxx55 = Specific Device Code  
xx= 29 or 30  
THERMAL CHARACTERISTICS  
G
A
Y
= Pb−Free Package  
= Assembly Location  
= Year  
Characteristic  
Symbol  
Max  
4.0  
Unit  
_C/W  
_C/W  
_C  
Thermal Resistance, Junction−to−Case (Note 2)  
Thermal Resistance, Junction−to−Ambient  
Lead Temperature for Soldering Purposes  
R
q
JC  
WW  
= Work Week  
R
q
JA  
62.5  
260  
T
L
ORDERING INFORMATION  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
Device  
MJF2955  
MJF2955G  
Package  
Shipping  
TO−220 FULLPACK 50 Units/Rail  
TO−220 FULLPACK 50 Units/Rail  
(Pb−Free)  
1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle v 10%.  
2. Measurement made with thermocouple contacting the bottom insulated  
surface (in a location beneath the die), the devices mounted on a heatsink with  
thermal grease and a mounting torque of ≥ 6 in. lbs.  
MJF3055  
TO−220 FULLPACK 50 Units/Rail  
3. Proper strike and creepage distance must be provided.  
MJF3055G  
TO−220 FULLPACK 50 Units/Rail  
(Pb−Free)  
*For additional information on our Pb−Free strategy and soldering details,  
please download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2008  
1
Publication Order Number:  
July, 2008 − Rev. 7  
MJF3055/D  
 
12345

中文翻译

下载PDF

与MJF3055_08相关器件

型号 品牌 获取价格 描述 数据表
MJF3055G ONSEMI

获取价格

 		Complementary Silicon Power Transistors
MJF31C ONSEMI

获取价格

 		3.0 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS 28 WATTS
MJF31C MOTOROLA

获取价格

 		3A, 100V, NPN, Si, POWER TRANSISTOR, TO-220, TO-220, 3 PIN
MJF31C_08 ONSEMI

获取价格

 		Complementary Silicon Plastic Power Transistors
MJF31CG ONSEMI

获取价格

 		Complementary Silicon Plastic Power Transistors
MJF32C ONSEMI

获取价格

 		3.0 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS 28 WATTS
MJF32C MOTOROLA

获取价格

 		Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
MJF32CG ONSEMI

获取价格

 		Complementary Silicon Plastic Power Transistors
MJF4343 ONSEMI

获取价格

 		POWER TRANSISTORS COMPLEMENTARY SILICON
MJF44H11 ONSEMI

获取价格

 		Complementary Power Transistors

与MJF3055_08相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证