Datasheet > MJF2955

MJF2955

更新时间： 2024-11-02 22:30:07

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管开关局域网
页数	文件大小	规格书
4页	159K
描述
COMPLEMENTARY SILICON POWER TRANSISTORS 10 AMPERES 90 VOLTS 30 WATTS

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MJF2955 数据手册

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by MJF3055/D

SEMICONDUCTOR TECHNICAL DATA

. . . specifically designed for general purpose amplifier and switching applications.

•

Isolated Overmold Package (1500 Volts RMS Min)

Electrically Similar to the Popular MJE3055T and MJE2955T

COMPLEMENTARY

SILICON

POWER TRANSISTORS

10 AMPERES

90 VOLTS

Collector–Emitter Sustaining Voltage — V

10 Amperes Rated Collector Current

No Isolating Washers Required

Reduced System Cost

90 Volts

CEO(sus)

30 WATTS

UL Recognized, File #E69369, to 3500 V

Isolation

RMS

CASE 221D–02

TO–220 TYPE

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

Adc

Collector–Emitter Sustaining Voltage

Collector–Emitter Breakdown Voltage

Base–Emitter Voltage

CEO(sus)

CES

EBO

Collector Current — Continuous

Base Current — Continuous

RMS Isolation Voltage (3)

(for 1 sec, R.H. < 30%,

Test No. 1 Per Fig. 4

Test No. 2 Per Fig. 5

Test No. 3 Per Fig. 6

ISOL

4500

3500

1500

RMS

= 25 C)

Total Power Dissipation @ T = 25 C (2)

0.25

Watts

W/ C

Derate above 25 C

Total Power Dissipation @ T = 25 C

Derate above 25 C

Watts

W/ C

0.016

Operating and Storage Temperature Range

T , T

–55 to +150

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

C/W

Thermal Resistance — Junction to Case (2)

Thermal Resistance — Junction to Ambient

Lead Temperature for Soldering Purposes

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle

θJC

62.5

260

θJA

10%.

(2) Measurement made with thermocouple contacting the bottom insulated surface (in a location beneath the die), the devices mounted on a

(2) heatsink with thermal grease and a mounting torque of ≥ 6 in. lbs.

(3) Proper strike and creepage distance must be provided.

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁵r Power Transistor Device Data

12 3 4

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