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MJF2955G

更新时间： 2024-11-03 10:55:43
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
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5页 116K
描述
Complementary Silicon Power Transistors

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MJF2955G 数据手册

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MJF3055 (NPN),  
MJF2955 (PNP)  
Complementary  
Silicon Power Transistors  
Specifically designed for general purpose amplifier and switching  
applications.  
http://onsemi.com  
Features  
COMPLEMENTARY SILICON  
POWER TRANSISTORS  
10 AMPERES  
• Isolated Overmold Package (1500 Volts RMS Min)  
• Electrically Similar to the Popular MJE3055T and MJE2955T  
• Collector−Emitter Sustaining Voltage − V  
• 10 Amperes Rated Collector Current  
• No Isolating Washers Required  
90 Volts  
CEO(sus)  
90 VOLTS, 30 WATTS  
• Reduced System Cost  
• UL Recognized, File #E69369, to 3500 V  
• Epoxy Meets UL 94 V−0 at 0.125 in  
Isolation  
RMS  
• ESD Ratings: Machine Model, C; u400 V  
TO−220 FULLPACK  
CASE 221D  
Human Body Model, 3B; u8000 V  
• Pb−Free Packages are Available*  
STYLE 2  
MAXIMUM RATINGS  
1
2
3
Rating  
Symbol  
Value  
90  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
Collector−Emitter Sustaining Voltage  
Collector−Emitter Breakdown Voltage  
Base−Emitter Voltage  
V
CEO(sus)  
MARKING DIAGRAM  
V
90  
CES  
EBO  
V
5.0  
10  
Collector Current − Continuous  
Base Current − Continuous  
I
C
I
B
6.0  
RMS Isolation Voltage (Note 3)  
V
ISOL  
V
RMS  
Fxx55G  
AYWW  
(t = 0.3 sec, R.H. ≤ 30%, T = 25_C)  
4500  
A
Per Figure 5  
Total Power Dissipation @ T = 25_C (Note 2)  
P
P
30  
W
C
D
0.25  
W/_C  
Derate above 25_C  
Total Power Dissipation @ T = 25_C  
2.0  
W
A
D
0.016 W/_C  
Derate above 25_C  
Operating and Storage Temperature Range  
T , T  
J
–55 to  
+150  
_C  
stg  
Fxx55 = Specific Device Code  
xx= 29 or 30  
THERMAL CHARACTERISTICS  
G
A
Y
= Pb−Free Package  
= Assembly Location  
= Year  
Characteristic  
Symbol  
Max  
4.0  
Unit  
_C/W  
_C/W  
_C  
Thermal Resistance, Junction−to−Case (Note 2)  
Thermal Resistance, Junction−to−Ambient  
Lead Temperature for Soldering Purposes  
R
q
JC  
WW  
= Work Week  
R
q
JA  
62.5  
260  
T
L
ORDERING INFORMATION  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
Device  
MJF2955  
MJF2955G  
Package  
Shipping  
TO−220 FULLPACK 50 Units/Rail  
TO−220 FULLPACK 50 Units/Rail  
(Pb−Free)  
1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle v 10%.  
2. Measurement made with thermocouple contacting the bottom insulated  
surface (in a location beneath the die), the devices mounted on a heatsink with  
thermal grease and a mounting torque of ≥ 6 in. lbs.  
MJF3055  
TO−220 FULLPACK 50 Units/Rail  
3. Proper strike and creepage distance must be provided.  
MJF3055G  
TO−220 FULLPACK 50 Units/Rail  
(Pb−Free)  
*For additional information on our Pb−Free strategy and soldering details,  
please download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2008  
1
Publication Order Number:  
July, 2008 − Rev. 7  
MJF3055/D  
 
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MJF2955G 替代型号

型号 品牌 替代类型 描述 数据表
MJF2955 ONSEMI

完全替代

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