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MJF18009 PDF预览

MJF18009

更新时间: 2024-11-02 22:30:07
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管功率双极晶体管开关局域网
页数 文件大小 规格书
10页 435K
描述
POWER TRANSISTORS 10 AMPERES 1000 VOLTS 50 and 150 WATTS

MJF18009 技术参数

生命周期:Transferred零件包装代码:SFM
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknown风险等级:5.46
Is Samacsys:N外壳连接:ISOLATED
最大集电极电流 (IC):10 A基于收集器的最大容量:200 pF
集电极-发射极最大电压:450 V配置:SINGLE
最小直流电流增益 (hFE):7JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:NPN功耗环境最大值:50 W
最大功率耗散 (Abs):50 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):12 MHz
最大关闭时间(toff):2500 ns最大开启时间(吨):300 ns
VCEsat-Max:0.7 VBase Number Matches:1

MJF18009 数据手册

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Order this document  
by MJE18009/D  
SEMICONDUCTOR TECHNICAL DATA  
POWER TRANSISTORS  
10 AMPERES  
The MJE/MJF18009 has an application specific state–of–the–art die designed for  
use in 220 V line–operated Switchmode Power supplies and electronic ballast (“light  
ballast”). These high voltage/high speed transistors exhibit the following main  
features:  
1000 VOLTS  
50 and 150 WATTS  
Improved Efficiency Due to Low Base Drive Requirements:  
— High and Flat DC Current Gain h  
— Fast Switching  
FE  
— No Coil Required in Base Circuit for Turn–Off (No Current Tail)  
Full Characterization at 125 C  
Motorola “6 SIGMA” Philosophy Provides Tight and Reproducible Parametric  
Distributions  
Specified Dynamic Saturation Data  
Two Package Choices: Standard TO–220 or Isolated TO–220  
MAXIMUM RATINGS  
Rating  
Symbol MJE18009 MJF18009  
Unit  
Vdc  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Emitter Sustaining Voltage  
Collector–Emitter Breakdown Voltage  
Collector–Base Breakdown Voltage  
Emitter–Base Voltage  
V
450  
1000  
1000  
9
CEO  
V
CES  
CBO  
EBO  
V
V
Collector Current — Continuous  
— Peak (1)  
I
10  
20  
C
CASE 221A–06  
TO–220AB  
I
CM  
Base Current — Continuous  
— Peak (1)  
I
4
8
Adc  
B
I
BM  
*Total Device Dissipation @ T = 25°C  
*Derate above 25 C  
P
D
150  
1.2  
50  
0.4  
Watt  
W/ C  
C
Operating and Storage Temperature  
T , T  
stg  
65 to 150  
4500  
C
V
J
RMS Isolation Voltage (2)  
Per Figure 22  
V
ISOL1  
ISOL2  
ISOL3  
(1s, 25°C, Humidity 30%)  
Per Figure 23  
Per Figure 24  
V
V
3500  
1500  
T
C
= 25°C  
THERMAL CHARACTERISTICS  
Rating  
Symbol MJE18009 MJF18009  
Unit  
Thermal Resistance — Junction to Case  
— Junction to Ambient  
R
θJC  
R
θJA  
0.83  
62.5  
2.5  
62.5  
C/W  
CASE 221D–02  
Maximum Lead Temperature for Soldering  
Purposes: 1/8from Case for 5 Seconds  
T
L
260  
C
TO–220 FULLPACK  
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle  
10%.  
(2) Proper strike and creepage distance must be provided.  
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit  
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.  
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.  
Motorola, Inc. 1995

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